Yalon E - Search Results

1

Rapid Flame Synthesis of Atomically Thin MoO₃ down to Monolayer Thickness for Effective Hole Doping of WSe₂.

Cai L, McClellan CJ, Koh AL, Li H, Yalon E, Pop E, Zheng X. Cai L, et al. Among authors: yalon e. Nano Lett. 2017 Jun 14;17(6):3854-3861. doi: 10.1021/acs.nanolett.7b01322. Epub 2017 Jun 1. Nano Lett. 2017. PMID: 28537732

2

Energy Dissipation in Monolayer MoS₂ Electronics.

Yalon E, McClellan CJ, Smithe KKH, Muñoz Rojo M, Xu RL, Suryavanshi SV, Gabourie AJ, Neumann CM, Xiong F, Farimani AB, Pop E. Yalon E, et al. Nano Lett. 2017 Jun 14;17(6):3429-3433. doi: 10.1021/acs.nanolett.7b00252. Epub 2017 May 2. Nano Lett. 2017. PMID: 28388845

3

Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS₂ by Raman Thermometry.

Yalon E, Aslan B, Smithe KKH, McClellan CJ, Suryavanshi SV, Xiong F, Sood A, Neumann CM, Xu X, Goodson KE, Heinz TF, Pop E. Yalon E, et al. ACS Appl Mater Interfaces. 2017 Dec 13;9(49):43013-43020. doi: 10.1021/acsami.7b11641. Epub 2017 Nov 28. ACS Appl Mater Interfaces. 2017. PMID: 29053241

4

Spatially Resolved Thermometry of Resistive Memory Devices.

Yalon E, Deshmukh S, Muñoz Rojo M, Lian F, Neumann CM, Xiong F, Pop E. Yalon E, et al. Sci Rep. 2017 Nov 10;7(1):15360. doi: 10.1038/s41598-017-14498-3. Sci Rep. 2017. PMID: 29127371 Free PMC article.

5

Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials.

Vaziri S, Yalon E, Muñoz Rojo M, Suryavanshi SV, Zhang H, McClellan CJ, Bailey CS, Smithe KKH, Gabourie AJ, Chen V, Deshmukh S, Bendersky L, Davydov AV, Pop E. Vaziri S, et al. Among authors: yalon e. Sci Adv. 2019 Aug 16;5(8):eaax1325. doi: 10.1126/sciadv.aax1325. eCollection 2019 Aug. Sci Adv. 2019. PMID: 31453337 Free PMC article.

6

Localized Heating and Switching in MoTe₂-Based Resistive Memory Devices.

Datye IM, Rojo MM, Yalon E, Deshmukh S, Mleczko MJ, Pop E. Datye IM, et al. Among authors: yalon e. Nano Lett. 2020 Feb 12;20(2):1461-1467. doi: 10.1021/acs.nanolett.9b05272. Epub 2020 Jan 30. Nano Lett. 2020. PMID: 31951419

7

Improved Current Density and Contact Resistance in Bilayer MoSe₂ Field Effect Transistors by AlO_x Capping.

Somvanshi D, Ber E, Bailey CS, Pop E, Yalon E. Somvanshi D, et al. Among authors: yalon e. ACS Appl Mater Interfaces. 2020 Aug 12;12(32):36355-36361. doi: 10.1021/acsami.0c09541. Epub 2020 Jul 31. ACS Appl Mater Interfaces. 2020. PMID: 32678569 Free PMC article.

8

Uncovering the Effects of Metal Contacts on Monolayer MoS₂.

Schauble K, Zakhidov D, Yalon E, Deshmukh S, Grady RW, Cooley KA, McClellan CJ, Vaziri S, Passarello D, Mohney SE, Toney MF, Sood AK, Salleo A, Pop E. Schauble K, et al. Among authors: yalon e. ACS Nano. 2020 Nov 24;14(11):14798-14808. doi: 10.1021/acsnano.0c03515. Epub 2020 Sep 23. ACS Nano. 2020. PMID: 32905703

9

High Current Density in Monolayer MoS₂ Doped by AlO_x.

McClellan CJ, Yalon E, Smithe KKH, Suryavanshi SV, Pop E. McClellan CJ, et al. Among authors: yalon e. ACS Nano. 2021 Jan 26;15(1):1587-1596. doi: 10.1021/acsnano.0c09078. Epub 2021 Jan 6. ACS Nano. 2021. PMID: 33405894

10

Tuning electrical and interfacial thermal properties of bilayer MoS₂via electrochemical intercalation.

Xiong F, Yalon E, McClellan CJ, Zhang J, Aslan B, Sood A, Sun J, Andolina CM, Saidi WA, Goodson KE, Heinz TF, Cui Y, Pop E. Xiong F, et al. Among authors: yalon e. Nanotechnology. 2021 Apr 6;32(26). doi: 10.1088/1361-6528/abe78a. Nanotechnology. 2021. PMID: 33601363

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