Zhang Y - Search Results

1

Atomic-Scale Mechanisms of Defect-Induced Retention Failure in Ferroelectrics.

Li L, Zhang Y, Xie L, Jokisaari JR, Beekman C, Yang JC, Chu YH, Christen HM, Pan X. Li L, et al. Among authors: zhang y. Nano Lett. 2017 Jun 14;17(6):3556-3562. doi: 10.1021/acs.nanolett.7b00696. Epub 2017 May 11. Nano Lett. 2017. PMID: 28471679

2

Atomic scale structure changes induced by charged domain walls in ferroelectric materials.

Li L, Gao P, Nelson CT, Jokisaari JR, Zhang Y, Kim SJ, Melville A, Adamo C, Schlom DG, Pan X. Li L, et al. Among authors: zhang y. Nano Lett. 2013 Nov 13;13(11):5218-23. doi: 10.1021/nl402651r. Epub 2013 Oct 3. Nano Lett. 2013. PMID: 24070735

3

Spontaneous vortex nanodomain arrays at ferroelectric heterointerfaces.

Nelson CT, Winchester B, Zhang Y, Kim SJ, Melville A, Adamo C, Folkman CM, Baek SH, Eom CB, Schlom DG, Chen LQ, Pan X. Nelson CT, et al. Among authors: zhang y. Nano Lett. 2011 Feb 9;11(2):828-34. doi: 10.1021/nl1041808. Epub 2011 Jan 19. Nano Lett. 2011. PMID: 21247184

4

Revealing the role of defects in ferroelectric switching with atomic resolution.

Gao P, Nelson CT, Jokisaari JR, Baek SH, Bark CW, Zhang Y, Wang E, Schlom DG, Eom CB, Pan X. Gao P, et al. Among authors: zhang y. Nat Commun. 2011 Dec 20;2:591. doi: 10.1038/ncomms1600. Nat Commun. 2011. PMID: 22186887 Free article.

5

Direct observations of retention failure in ferroelectric memories.

Gao P, Nelson CT, Jokisaari JR, Zhang Y, Baek SH, Bark CW, Wang E, Liu Y, Li J, Eom CB, Pan X. Gao P, et al. Among authors: zhang y. Adv Mater. 2012 Feb 21;24(8):1106-10. doi: 10.1002/adma.201103983. Adv Mater. 2012. PMID: 22331626 Free article.

6

Giant Resistive Switching via Control of Ferroelectric Charged Domain Walls.

Li L, Britson J, Jokisaari JR, Zhang Y, Adamo C, Melville A, Schlom DG, Chen LQ, Pan X. Li L, et al. Among authors: zhang y. Adv Mater. 2016 Aug;28(31):6574-80. doi: 10.1002/adma.201600160. Epub 2016 May 23. Adv Mater. 2016. PMID: 27213756 Free article.

7

Giant Ferroelectric Polarization in Ultrathin Ferroelectrics via Boundary-Condition Engineering.

Xie L, Li L, Heikes CA, Zhang Y, Hong Z, Gao P, Nelson CT, Xue F, Kioupakis E, Chen L, Schlom DG, Wang P, Pan X. Xie L, et al. Among authors: zhang y. Adv Mater. 2017 Aug;29(30). doi: 10.1002/adma.201701475. Epub 2017 Jun 6. Adv Mater. 2017. PMID: 28585347

8

Control of Domain Structures in Multiferroic Thin Films through Defect Engineering.

Li L, Jokisaari JR, Zhang Y, Cheng X, Yan X, Heikes C, Lin Q, Gadre C, Schlom DG, Chen LQ, Pan X. Li L, et al. Among authors: zhang y. Adv Mater. 2018 Sep;30(38):e1802737. doi: 10.1002/adma.201802737. Epub 2018 Aug 6. Adv Mater. 2018. PMID: 30084144

9

Deterministic, Reversible, and Nonvolatile Low-Voltage Writing of Magnetic Domains in Epitaxial BaTiO₃/Fe₃O₄ Heterostructure.

Zhong G, An F, Bitla Y, Wang J, Zhong X, Yu J, Gao W, Zhang Y, Tan C, Ou Y, Jiang J, Hsieh YH, Pan X, Xie S, Chu YH, Li J. Zhong G, et al. Among authors: zhang y. ACS Nano. 2018 Sep 25;12(9):9558-9567. doi: 10.1021/acsnano.8b05284. Epub 2018 Aug 27. ACS Nano. 2018. PMID: 30138564

10

Discovery of a magnetic conductive interface in PbZr_0.2Ti_0.8O₃ /SrTiO₃ heterostructures.

Zhang Y, Xie L, Kim J, Stern A, Wang H, Zhang K, Yan X, Li L, Liu H, Zhao G, Chi H, Gadre C, Lin Q, Zhou Y, Uher C, Chen T, Chu YH, Xia J, Wu R, Pan X. Zhang Y, et al. Among authors: zhang k. Nat Commun. 2018 Feb 15;9(1):685. doi: 10.1038/s41467-018-02914-9. Nat Commun. 2018. PMID: 29449561 Free PMC article.

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