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Page 1
Thermally Assisted Nonvolatile Memory in Monolayer MoS2 Transistors.
He G, Ramamoorthy H, Kwan CP, Lee YH, Nathawat J, Somphonsane R, Matsunaga M, Higuchi A, Yamanaka T, Aoki N, Gong Y, Zhang X, Vajtai R, Ajayan PM, Bird JP. He G, et al. Nano Lett. 2016 Oct 12;16(10):6445-6451. doi: 10.1021/acs.nanolett.6b02905. Epub 2016 Sep 28. Nano Lett. 2016. PMID: 27680095
Transient Response of h-BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping.
Nathawat J, Zhao M, Kwan CP, Yin S, Arabchigavkani N, Randle M, Ramamoorthy H, He G, Somphonsane R, Matsumoto N, Sakanashi K, Kida M, Aoki N, Jin Z, Kim Y, Kim GH, Watanabe K, Taniguchi T, Bird JP. Nathawat J, et al. Among authors: he g. ACS Omega. 2019 Feb 22;4(2):4082-4090. doi: 10.1021/acsomega.8b03259. eCollection 2019 Feb 28. ACS Omega. 2019. PMID: 31459617 Free PMC article.
Negative Differential Conductance & Hot-Carrier Avalanching in Monolayer WS2 FETs.
He G, Nathawat J, Kwan CP, Ramamoorthy H, Somphonsane R, Zhao M, Ghosh K, Singisetti U, Perea-López N, Zhou C, Elías AL, Terrones M, Gong Y, Zhang X, Vajtai R, Ajayan PM, Ferry DK, Bird JP. He G, et al. Sci Rep. 2017 Sep 12;7(1):11256. doi: 10.1038/s41598-017-11647-6. Sci Rep. 2017. PMID: 28900169 Free PMC article.
Remote Mesoscopic Signatures of Induced Magnetic Texture in Graphene.
Arabchigavkani N, Somphonsane R, Ramamoorthy H, He G, Nathawat J, Yin S, Barut B, He K, Randle MD, Dixit R, Sakanashi K, Aoki N, Zhang K, Wang L, Mei WN, Dowben PA, Fransson J, Bird JP. Arabchigavkani N, et al. Among authors: he g, he k. Phys Rev Lett. 2021 Feb 26;126(8):086802. doi: 10.1103/PhysRevLett.126.086802. Phys Rev Lett. 2021. PMID: 33709762
6,500 results