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Custom sample environments at the ALBA XPEEM.
Foerster M, Prat J, Massana V, Gonzalez N, Fontsere A, Molas B, Matilla O, Pellegrin E, Aballe L. Foerster M, et al. Among authors: fontsere a. Ultramicroscopy. 2016 Dec;171:63-69. doi: 10.1016/j.ultramic.2016.08.016. Epub 2016 Aug 30. Ultramicroscopy. 2016. PMID: 27620135
Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor.
Pérez-Tomás A, Catalàn G, Fontserè A, Iglesias V, Chen H, Gammon PM, Jennings MR, Thomas M, Fisher CA, Sharma YK, Placidi M, Chmielowska M, Chenot S, Porti M, Nafría M, Cordier Y. Pérez-Tomás A, et al. Among authors: fontsere a. Nanotechnology. 2015 Mar 20;26(11):115203. doi: 10.1088/0957-4484/26/11/115203. Epub 2015 Feb 26. Nanotechnology. 2015. PMID: 25719801 Free article.
Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors.
Fontserè A, Pérez-Tomás A, Placidi M, Llobet J, Baron N, Chenot S, Cordier Y, Moreno JC, Jennings MR, Gammon PM, Fisher CA, Iglesias V, Porti M, Bayerl A, Lanza M, Nafría M. Fontserè A, et al. Nanotechnology. 2012 Oct 5;23(39):395204. doi: 10.1088/0957-4484/23/39/395204. Epub 2012 Sep 12. Nanotechnology. 2012. PMID: 22971927