Heo J - Search Results

1

Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio.

Vu QA, Shin YS, Kim YR, Nguyen VL, Kang WT, Kim H, Luong DH, Lee IM, Lee K, Ko DS, Heo J, Park S, Lee YH, Yu WJ. Vu QA, et al. Among authors: heo j. Nat Commun. 2016 Sep 2;7:12725. doi: 10.1038/ncomms12725. Nat Commun. 2016. PMID: 27586841 Free PMC article.

2

Tuning Carrier Tunneling in van der Waals Heterostructures for Ultrahigh Detectivity.

Vu QA, Lee JH, Nguyen VL, Shin YS, Lim SC, Lee K, Heo J, Park S, Kim K, Lee YH, Yu WJ. Vu QA, et al. Among authors: heo j. Nano Lett. 2017 Jan 11;17(1):453-459. doi: 10.1021/acs.nanolett.6b04449. Epub 2016 Dec 20. Nano Lett. 2017. PMID: 27983857

3

Mobility Engineering in Vertical Field Effect Transistors Based on Van der Waals Heterostructures.

Shin YS, Lee K, Kim YR, Lee H, Lee IM, Kang WT, Lee BH, Kim K, Heo J, Park S, Lee YH, Yu WJ. Shin YS, et al. Among authors: heo j. Adv Mater. 2018 Mar;30(9). doi: 10.1002/adma.201704435. Epub 2018 Jan 15. Adv Mater. 2018. PMID: 29333683

4

Ultrahigh Gauge Factor in Graphene/MoS₂ Heterojunction Field Effect Transistor with Variable Schottky Barrier.

Lee I, Kang WT, Shin YS, Kim YR, Won UY, Kim K, Duong DL, Lee K, Heo J, Lee YH, Yu WJ. Lee I, et al. Among authors: heo j. ACS Nano. 2019 Jul 23;13(7):8392-8400. doi: 10.1021/acsnano.9b03993. Epub 2019 Jun 26. ACS Nano. 2019. PMID: 31241306

5

Reconfigurable van der Waals Heterostructured Devices with Metal-Insulator Transition.

Heo J, Jeong H, Cho Y, Lee J, Lee K, Nam S, Lee EK, Lee S, Lee H, Hwang S, Park S. Heo J, et al. Nano Lett. 2016 Nov 9;16(11):6746-6754. doi: 10.1021/acs.nanolett.6b02199. Epub 2016 Oct 5. Nano Lett. 2016. PMID: 27704847

6

Direct growth of doping controlled monolayer WSe₂ by selenium-phosphorus substitution.

Kang WT , Lee IM , Yun SJ , Song YI , Kim K , Kim DH , Shin YS , Lee K , Heo J , Kim YM , Lee YH , Yu WJ . Kang WT , et al. Among authors: heo j. Nanoscale. 2018 Jun 21;10(24):11397-11402. doi: 10.1039/c8nr03427c. Nanoscale. 2018. PMID: 29877543

7

Graphene barristor, a triode device with a gate-controlled Schottky barrier.

Yang H, Heo J, Park S, Song HJ, Seo DH, Byun KE, Kim P, Yoo I, Chung HJ, Kim K. Yang H, et al. Among authors: heo j. Science. 2012 Jun 1;336(6085):1140-3. doi: 10.1126/science.1220527. Epub 2012 May 17. Science. 2012. PMID: 22604723

8

Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors.

Jeong SJ, Gu Y, Heo J, Yang J, Lee CS, Lee MH, Lee Y, Kim H, Park S, Hwang S. Jeong SJ, et al. Among authors: heo j. Sci Rep. 2016 Feb 10;6:20907. doi: 10.1038/srep20907. Sci Rep. 2016. PMID: 26861833 Free PMC article.

9

Graphene and thin-film semiconductor heterojunction transistors integrated on wafer scale for low-power electronics.

Heo J, Byun KE, Lee J, Chung HJ, Jeon S, Park S, Hwang S. Heo J, et al. Nano Lett. 2013;13(12):5967-71. doi: 10.1021/nl403142v. Epub 2013 Nov 25. Nano Lett. 2013. PMID: 24256403

10

Characterization of Edge Contact: Atomically Resolved Semiconductor-Metal Lateral Boundary in MoS₂.

Kwon H, Lee K, Heo J, Oh Y, Lee H, Appalakondaiah S, Ko W, Kim HW, Jung JW, Suh H, Min H, Jeon I, Hwang E, Hwang S. Kwon H, et al. Among authors: heo j. Adv Mater. 2017 Nov;29(41). doi: 10.1002/adma.201702931. Epub 2017 Sep 18. Adv Mater. 2017. PMID: 28922484

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