Tappertzhofen S - Search Results

1

Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching.

Cho S, Yun C, Tappertzhofen S, Kursumovic A, Lee S, Lu P, Jia Q, Fan M, Jian J, Wang H, Hofmann S, MacManus-Driscoll JL. Cho S, et al. Among authors: tappertzhofen s. Nat Commun. 2016 Aug 5;7:12373. doi: 10.1038/ncomms12373. Nat Commun. 2016. PMID: 27491392 Free PMC article.

2

Electrochemical dynamics of nanoscale metallic inclusions in dielectrics.

Yang Y, Gao P, Li L, Pan X, Tappertzhofen S, Choi S, Waser R, Valov I, Lu WD. Yang Y, et al. Among authors: tappertzhofen s. Nat Commun. 2014 Jun 23;5:4232. doi: 10.1038/ncomms5232. Nat Commun. 2014. PMID: 24953477 Free article.

3

Nanoscale Plasmon-Enhanced Spectroscopy in Memristive Switches.

Di Martino G, Tappertzhofen S, Hofmann S, Baumberg J. Di Martino G, et al. Among authors: tappertzhofen s. Small. 2016 Mar 9;12(10):1334-41. doi: 10.1002/smll.201503165. Epub 2016 Jan 12. Small. 2016. PMID: 26756792

4

Catalyst Interface Engineering for Improved 2D Film Lift-Off and Transfer.

Wang R, Whelan PR, Braeuninger-Weimer P, Tappertzhofen S, Alexander-Webber JA, Van Veldhoven ZA, Kidambi PR, Jessen BS, Booth T, Bøggild P, Hofmann S. Wang R, et al. Among authors: tappertzhofen s. ACS Appl Mater Interfaces. 2016 Dec 7;8(48):33072-33082. doi: 10.1021/acsami.6b11685. Epub 2016 Nov 22. ACS Appl Mater Interfaces. 2016. PMID: 27934130 Free PMC article.

5

Embedded nanoparticle dynamics and their influence on switching behaviour of resistive memory devices.

Tappertzhofen S, Hofmann S. Tappertzhofen S, et al. Nanoscale. 2017 Nov 16;9(44):17494-17504. doi: 10.1039/c7nr05847k. Nanoscale. 2017. PMID: 29109988

6

Buried graphene heterostructures for electrostatic doping of low-dimensional materials.

Gumprich A, Liedtke J, Beck S, Chirca I, Potočnik T, Alexander-Webber JA, Hofmann S, Tappertzhofen S. Gumprich A, et al. Among authors: tappertzhofen s. Nanotechnology. 2023 Apr 13;34(26). doi: 10.1088/1361-6528/acbaa2. Nanotechnology. 2023. PMID: 36758234

7

Nanobatteries in redox-based resistive switches require extension of memristor theory.

Valov I, Linn E, Tappertzhofen S, Schmelzer S, van den Hurk J, Lentz F, Waser R. Valov I, et al. Among authors: tappertzhofen s. Nat Commun. 2013;4:1771. doi: 10.1038/ncomms2784. Nat Commun. 2013. PMID: 23612312 Free PMC article.

8

Capacity based nondestructive readout for complementary resistive switches.

Tappertzhofen S, Linn E, Nielen L, Rosezin R, Lentz F, Bruchhaus R, Valov I, Böttger U, Waser R. Tappertzhofen S, et al. Nanotechnology. 2011 Sep 30;22(39):395203. doi: 10.1088/0957-4484/22/39/395203. Epub 2011 Sep 5. Nanotechnology. 2011. PMID: 21891857

9

Quantum conductance and switching kinetics of AgI-based microcrossbar cells.

Tappertzhofen S, Valov I, Waser R. Tappertzhofen S, et al. Nanotechnology. 2012 Apr 13;23(14):145703. doi: 10.1088/0957-4484/23/14/145703. Nanotechnology. 2012. PMID: 22434046

10

Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide.

Tappertzhofen S, Mündelein H, Valov I, Waser R. Tappertzhofen S, et al. Nanoscale. 2012 May 21;4(10):3040-3. doi: 10.1039/c2nr30413a. Epub 2012 Apr 13. Nanoscale. 2012. PMID: 22504836

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