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UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices.
Lähnemann J, Den Hertog M, Hille P, de la Mata M, Fournier T, Schörmann J, Arbiol J, Eickhoff M, Monroy E. Lähnemann J, et al. Among authors: hille p. Nano Lett. 2016 May 11;16(5):3260-7. doi: 10.1021/acs.nanolett.6b00806. Epub 2016 Apr 27. Nano Lett. 2016. PMID: 27104371
Doping-Induced Universal Conductance Fluctuations in GaN Nanowires.
Elm MT, Uredat P, Binder J, Ostheim L, Schäfer M, Hille P, Müßener J, Schörmann J, Eickhoff M, Klar PJ. Elm MT, et al. Among authors: hille p. Nano Lett. 2015 Dec 9;15(12):7822-8. doi: 10.1021/acs.nanolett.5b02332. Epub 2015 Nov 12. Nano Lett. 2015. PMID: 26544014
Electrical transport properties of Ge-doped GaN nanowires.
Schäfer M, Günther M, Länger C, Müßener J, Feneberg M, Uredat P, Elm MT, Hille P, Schörmann J, Teubert J, Henning T, Klar PJ, Eickhoff M. Schäfer M, et al. Among authors: hille p. Nanotechnology. 2015 Mar 27;26(13):135704. doi: 10.1088/0957-4484/26/13/135704. Epub 2015 Mar 11. Nanotechnology. 2015. PMID: 25760310
71 results