McIntyre PC - Search Results

1

Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance.

Satterthwaite PF, Scheuermann AG, Hurley PK, Chidsey CE, McIntyre PC. Satterthwaite PF, et al. Among authors: mcintyre pc. ACS Appl Mater Interfaces. 2016 May 25;8(20):13140-9. doi: 10.1021/acsami.6b03029. Epub 2016 May 16. ACS Appl Mater Interfaces. 2016. PMID: 27096845

2

Germanium nanowire epitaxy: shape and orientation control.

Adhikari H, Marshall AF, Chidsey CE, McIntyre PC. Adhikari H, et al. Among authors: mcintyre pc. Nano Lett. 2006 Feb;6(2):318-23. doi: 10.1021/nl052231f. Nano Lett. 2006. PMID: 16464057

3

Vertically oriented germanium nanowires grown from gold colloids on silicon substrates and subsequent gold removal.

Woodruff JH, Ratchford JB, Goldthorpe IA, McIntyre PC, Chidsey CE. Woodruff JH, et al. Among authors: mcintyre pc. Nano Lett. 2007 Jun;7(6):1637-42. doi: 10.1021/nl070595x. Epub 2007 May 27. Nano Lett. 2007. PMID: 17530912

4

Metastability of Au-Ge liquid nanocatalysts: Ge vapor-liquid-solid nanowire growth far below the bulk eutectic temperature.

Adhikari H, Marshall AF, Goldthorpe IA, Chidsey CE, McIntyre PC. Adhikari H, et al. Among authors: mcintyre pc. ACS Nano. 2007 Dec;1(5):415-22. doi: 10.1021/nn7001486. ACS Nano. 2007. PMID: 19206662

5

Gold removal from germanium nanowires.

Ratchford JB, Goldthorpe IA, Sun Y, McIntyre PC, Pianetta PA, Chidsey CE. Ratchford JB, et al. Among authors: mcintyre pc. Langmuir. 2009 Aug 18;25(16):9473-9. doi: 10.1021/la900725b. Langmuir. 2009. PMID: 19419180

6

Atomic layer-deposited tunnel oxide stabilizes silicon photoanodes for water oxidation.

Chen YW, Prange JD, Dühnen S, Park Y, Gunji M, Chidsey CE, McIntyre PC. Chen YW, et al. Among authors: mcintyre pc. Nat Mater. 2011 Jun 19;10(7):539-44. doi: 10.1038/nmat3047. Nat Mater. 2011. PMID: 21685904

7

Oxide-encapsulated vertical germanium nanowire structures and their DC transport properties.

Leu PW, Adhikari H, Koto M, Kim KH, Rouffignac Pd, Marshall AF, Gordon RG, Chidsey CE, McIntyre PC. Leu PW, et al. Among authors: mcintyre pc. Nanotechnology. 2008 Dec 3;19(48):485705. doi: 10.1088/0957-4484/19/48/485705. Epub 2008 Nov 12. Nanotechnology. 2008. PMID: 21836312

8

Tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition.

Byun YC, Choi S, An Y, McIntyre PC, Kim H. Byun YC, et al. Among authors: mcintyre pc. ACS Appl Mater Interfaces. 2014 Jul 9;6(13):10482-8. doi: 10.1021/am502048d. Epub 2014 Jun 18. ACS Appl Mater Interfaces. 2014. PMID: 24911531

9

Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition.

Zhernokletov DM, Negara MA, Long RD, Aloni S, Nordlund D, McIntyre PC. Zhernokletov DM, et al. Among authors: mcintyre pc. ACS Appl Mater Interfaces. 2015 Jun 17;7(23):12774-80. doi: 10.1021/acsami.5b01600. Epub 2015 Jun 2. ACS Appl Mater Interfaces. 2015. PMID: 25988586

10

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

Zhang L, Li H, Guo Y, Tang K, Woicik J, Robertson J, McIntyre PC. Zhang L, et al. Among authors: mcintyre pc. ACS Appl Mater Interfaces. 2015 Sep 23;7(37):20499-506. doi: 10.1021/acsami.5b06087. Epub 2015 Sep 9. ACS Appl Mater Interfaces. 2015. PMID: 26334784

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