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Direct Bandgap Light Emission from Strained Germanium Nanowires Coupled with High-Q Nanophotonic Cavities.
Nano Lett. 2016 Apr 13;16(4):2168-73. doi: 10.1021/acs.nanolett.5b03976. Epub 2016 Mar 2.
Nano Lett. 2016.
PMID: 26907359
Strain-induced pseudoheterostructure nanowires confining carriers at room temperature with nanoscale-tunable band profiles.
Nam D, Sukhdeo DS, Kang JH, Petykiewicz J, Lee JH, Jung WS, Vučković J, Brongersma ML, Saraswat KC.
Nam D, et al. Among authors: sukhdeo ds.
Nano Lett. 2013 Jul 10;13(7):3118-23. doi: 10.1021/nl401042n. Epub 2013 Jun 14.
Nano Lett. 2013.
PMID: 23758608
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Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics.
Sukhdeo DS, Nam D, Kang JH, Brongersma ML, Saraswat KC.
Sukhdeo DS, et al.
Opt Express. 2015 Jun 29;23(13):16740-9. doi: 10.1364/OE.23.016740.
Opt Express. 2015.
PMID: 26191686
Free article.
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Ge microdisk with lithographically-tunable strain using CMOS-compatible process.
Sukhdeo DS, Petykiewicz J, Gupta S, Kim D, Woo S, Kim Y, Vučković J, Saraswat KC, Nam D.
Sukhdeo DS, et al.
Opt Express. 2015 Dec 28;23(26):33249-54. doi: 10.1364/OE.23.033249.
Opt Express. 2015.
PMID: 26831991
Free article.
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