Im S - Search Results

1

Reply to "Comment on 'Metal Semiconductor Field-Effect Transistor with MoS₂/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed'".

Kim JS, Lee HS, Im S. Kim JS, et al. Among authors: im s. ACS Nano. 2016 Feb 23;10(2):1716-7. doi: 10.1021/acsnano.5b08198. Epub 2016 Feb 4. ACS Nano. 2016. PMID: 26845083 No abstract available.

2

An almost transparent image pixel with a pentacene/ZnO photodiode, a pentacene thin-film transistor, and a 6,13-pentacenequinone phosphor layer.

Lee KH, Lee HS, Lee K, Ha T, Kim JH, Im S. Lee KH, et al. Among authors: im s. Adv Mater. 2011 Mar 11;23(10):1231-6. doi: 10.1002/adma.201003646. Epub 2011 Jan 25. Adv Mater. 2011. PMID: 21381120 No abstract available.

3

MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap.

Lee HS, Min SW, Chang YG, Park MK, Nam T, Kim H, Kim JH, Ryu S, Im S. Lee HS, et al. Among authors: im s. Nano Lett. 2012 Jul 11;12(7):3695-700. doi: 10.1021/nl301485q. Epub 2012 Jun 13. Nano Lett. 2012. PMID: 22681413

4

Stability-improved organic n-channel thin-film transistors with nm-thin hydrophobic polymer-coated high-k dielectrics.

Park JH, Lee HS, Lee J, Lee K, Lee G, Yoon KH, Sung MM, Im S. Park JH, et al. Among authors: im s. Phys Chem Chem Phys. 2012 Nov 7;14(41):14202-6. doi: 10.1039/c2cp41544e. Phys Chem Chem Phys. 2012. PMID: 22820975

5

MoS2 nanosheets for top-gate nonvolatile memory transistor channel.

Lee HS, Min SW, Park MK, Lee YT, Jeon PJ, Kim JH, Ryu S, Im S. Lee HS, et al. Among authors: im s. Small. 2012 Oct 22;8(20):3111-5. doi: 10.1002/smll.201200752. Epub 2012 Jul 31. Small. 2012. PMID: 22851454 No abstract available.

6

Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance.

Min SW, Lee HS, Choi HJ, Park MK, Nam T, Kim H, Ryu S, Im S. Min SW, et al. Among authors: im s. Nanoscale. 2013 Jan 21;5(2):548-51. doi: 10.1039/c2nr33443g. Epub 2012 Dec 12. Nanoscale. 2013. PMID: 23233087

7

Origin of bias-stress induced instability in organic thin-film transistors with semiconducting small-molecule/insulating polymer blend channel.

Park JH, Lee YT, Lee HS, Lee JY, Lee K, Lee GB, Han J, Kim TW, Im S. Park JH, et al. Among authors: im s. ACS Appl Mater Interfaces. 2013 Mar 13;5(5):1625-9. doi: 10.1021/am3022703. Epub 2013 Mar 4. ACS Appl Mater Interfaces. 2013. PMID: 23421395

8

Sensing extremely limited H₂ contents by Pd nanogap connected to an amorphous InGaZnO thin-film transistor.

Lee YT, Jung H, Nam SH, Jeon PJ, Kim JS, Jang B, Lee W, Im S. Lee YT, et al. Among authors: im s. Nanoscale. 2013 Oct 7;5(19):8915-20. doi: 10.1039/c3nr01847d. Epub 2013 Aug 14. Nanoscale. 2013. PMID: 23942638

9

DNA-base guanine as hydrogen getter and charge-trapping layer embedded in oxide dielectrics for inorganic and organic field-effect transistors.

Lee J, Park JH, Lee YT, Jeon PJ, Lee HS, Nam SH, Yi Y, Lee Y, Im S. Lee J, et al. Among authors: im s. ACS Appl Mater Interfaces. 2014 Apr 9;6(7):4965-73. doi: 10.1021/am405998d. Epub 2014 Mar 21. ACS Appl Mater Interfaces. 2014. PMID: 24506161

10

Graphene versus ohmic metal as source-drain electrode for MoS₂ nanosheet transistor channel.

Lee YT, Choi K, Lee HS, Min SW, Jeon PJ, Hwang DK, Choi HJ, Im S. Lee YT, et al. Among authors: im s. Small. 2014 Jun 25;10(12):2356-61. doi: 10.1002/smll.201303908. Epub 2014 Mar 2. Small. 2014. PMID: 24591250 No abstract available.

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