Schmidt H - Search Results

1

Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes.

You T, Ou X, Niu G, Bärwolf F, Li G, Du N, Bürger D, Skorupa I, Jia Q, Yu W, Wang X, Schmidt OG, Schmidt H. You T, et al. Among authors: schmidt og, schmidt h. Sci Rep. 2015 Dec 22;5:18623. doi: 10.1038/srep18623. Sci Rep. 2015. PMID: 26692104 Free PMC article.

2

Increased static dielectric constant in ZnMnO and ZnCoO thin films with bound magnetic polarons.

Vegesna SV, Bhat VJ, Bürger D, Dellith J, Skorupa I, Schmidt OG, Schmidt H. Vegesna SV, et al. Among authors: schmidt og, schmidt h. Sci Rep. 2020 Apr 21;10(1):6698. doi: 10.1038/s41598-020-63195-1. Sci Rep. 2020. PMID: 32317657 Free PMC article.

3

Key concepts behind forming-free resistive switching incorporated with rectifying transport properties.

Shuai Y, Ou X, Luo W, Mücklich A, Bürger D, Zhou S, Wu C, Chen Y, Zhang W, Helm M, Mikolajick T, Schmidt OG, Schmidt H. Shuai Y, et al. Among authors: schmidt og, schmidt h. Sci Rep. 2013;3:2208. doi: 10.1038/srep02208. Sci Rep. 2013. PMID: 23860408 Free PMC article.

4

Forming-free resistive switching in multiferroic BiFeO3 thin films with enhanced nanoscale shunts.

Ou X, Shuai Y, Luo W, Siles PF, Kögler R, Fiedler J, Reuther H, Zhou S, Hübner R, Facsko S, Helm M, Mikolajick T, Schmidt OG, Schmidt H. Ou X, et al. Among authors: schmidt og, schmidt h. ACS Appl Mater Interfaces. 2013 Dec 11;5(23):12764-71. doi: 10.1021/am404144c. Epub 2013 Nov 19. ACS Appl Mater Interfaces. 2013. PMID: 24206244

5

Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristors.

You T, Du N, Slesazeck S, Mikolajick T, Li G, Bürger D, Skorupa I, Stöcker H, Abendroth B, Beyer A, Volz K, Schmidt OG, Schmidt H. You T, et al. Among authors: schmidt og, schmidt h. ACS Appl Mater Interfaces. 2014 Nov 26;6(22):19758-65. doi: 10.1021/am504871g. Epub 2014 Nov 14. ACS Appl Mater Interfaces. 2014. PMID: 25366867

6

Single pairing spike-timing dependent plasticity in BiFeO3 memristors with a time window of 25 ms to 125 μs.

Du N, Kiani M, Mayr CG, You T, Bürger D, Skorupa I, Schmidt OG, Schmidt H. Du N, et al. Among authors: schmidt og, schmidt h. Front Neurosci. 2015 Jun 30;9:227. doi: 10.3389/fnins.2015.00227. eCollection 2015. Front Neurosci. 2015. PMID: 26175666 Free PMC article.

7

Bipolar resistive switching in YMnO₃/Nb:SrTiO₃ pn-heterojunctions.

Bogusz A, Bürger D, Skorupa I, Schmidt OG, Schmidt H. Bogusz A, et al. Among authors: schmidt og, schmidt h. Nanotechnology. 2016 Nov 11;27(45):455201. doi: 10.1088/0957-4484/27/45/455201. Epub 2016 Oct 3. Nanotechnology. 2016. PMID: 27694695

8

Plasma-Induced Nonvolatile Resistive Switching with Extremely Low SET Voltage in TiO_xF_y with AgF Nanoparticles.

Sun X, Wu C, Shuai Y, Pan X, Luo W, You T, Bogusz A, Du N, Li Y, Schmidt H. Sun X, et al. Among authors: schmidt h. ACS Appl Mater Interfaces. 2016 Dec 7;8(48):32956-32962. doi: 10.1021/acsami.6b11049. Epub 2016 Nov 22. ACS Appl Mater Interfaces. 2016. PMID: 27934191

9

P-N Junction-Based Si Biochips with Ring Electrodes for Novel Biosensing Applications.

Kiani M, Du N, Vogel M, Raff J, Hübner U, Skorupa I, Bürger D, Schulz SE, Schmidt OG, Schmidt H. Kiani M, et al. Among authors: schmidt og, schmidt h. Biosensors (Basel). 2019 Oct 11;9(4):120. doi: 10.3390/bios9040120. Biosensors (Basel). 2019. PMID: 31614428 Free PMC article.

10

Practical guide for validated memristance measurements.

Du N, Shuai Y, Luo W, Mayr C, Schüffny R, Schmidt OG, Schmidt H. Du N, et al. Among authors: schmidt og, schmidt h. Rev Sci Instrum. 2013 Feb;84(2):023903. doi: 10.1063/1.4775718. Rev Sci Instrum. 2013. PMID: 23464223

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