Feng S - Search Results

1

Direct observation of titanium-centered octahedra in titanium-antimony-tellurium phase-change material.

Rao F, Song Z, Cheng Y, Liu X, Xia M, Li W, Ding K, Feng X, Zhu M, Feng S. Rao F, et al. Among authors: feng x, feng s. Nat Commun. 2015 Nov 27;6:10040. doi: 10.1038/ncomms10040. Nat Commun. 2015. PMID: 26610374 Free PMC article.

2

One order of magnitude faster phase change at reduced power in Ti-Sb-Te.

Zhu M, Xia M, Rao F, Li X, Wu L, Ji X, Lv S, Song Z, Feng S, Sun H, Zhang S. Zhu M, et al. Among authors: feng s. Nat Commun. 2014 Jul 8;5:4086. doi: 10.1038/ncomms5086. Nat Commun. 2014. PMID: 25001009 Free PMC article.

3

O-doped Si2Sb2Te5 nano-composite phase change material for application of chalcogenide random access memory.

Zhang T, Song Z, Liu B, Wang F, Feng S. Zhang T, et al. Among authors: feng s. J Nanosci Nanotechnol. 2009 Feb;9(2):1090-3. doi: 10.1166/jnn.2009.c094. J Nanosci Nanotechnol. 2009. PMID: 19441462

4

Low-consumption phase change material with good data retention selected from SbxTe.

Gu Y, Zhang T, Song Z, Liu B, Feng S. Gu Y, et al. Among authors: feng s. J Nanosci Nanotechnol. 2010 Nov;10(11):7040-4. doi: 10.1166/jnn.2010.2808. J Nanosci Nanotechnol. 2010. PMID: 21137861

5

Programming voltage reduction in phase change memory cells with tungsten trioxide bottom heating layer/electrode.

Rao F, Song Z, Gong Y, Wu L, Feng S, Chen B. Rao F, et al. Among authors: feng s. Nanotechnology. 2008 Nov 5;19(44):445706. doi: 10.1088/0957-4484/19/44/445706. Epub 2008 Sep 30. Nanotechnology. 2008. PMID: 21832748

6

Reactive ion etching of Si(x)Sb2Te in CF4/Ar plasma for nonvolatile phase-change memory device.

Gu Y, Song S, Song Z, Cheng Y, Liu X, Du X, Liu B, Feng S. Gu Y, et al. Among authors: feng s. J Nanosci Nanotechnol. 2013 Feb;13(2):1594-7. doi: 10.1166/jnn.2013.6069. J Nanosci Nanotechnol. 2013. PMID: 23646688

7

Understanding phase-change behaviors of carbon-doped Ge₂Sb₂Te₅ for phase-change memory application.

Zhou X, Xia M, Rao F, Wu L, Li X, Song Z, Feng S, Sun H. Zhou X, et al. Among authors: feng s. ACS Appl Mater Interfaces. 2014 Aug 27;6(16):14207-14. doi: 10.1021/am503502q. Epub 2014 Aug 14. ACS Appl Mater Interfaces. 2014. PMID: 25090618

8

Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon.

Song S, Yao D, Song Z, Gao L, Zhang Z, Li L, Shen L, Wu L, Liu B, Cheng Y, Feng S. Song S, et al. Among authors: feng s. Nanoscale Res Lett. 2015 Feb 28;10:89. doi: 10.1186/s11671-015-0815-5. eCollection 2015. Nanoscale Res Lett. 2015. PMID: 25852385 Free PMC article.

9

Understanding the crystallization behavior of as-deposited Ti-Sb-Te alloys through real-time radial distribution functions.

Zhu M, Xia M, Song Z, Cheng Y, Wu L, Rao F, Song S, Wang M, Lu Y, Feng S. Zhu M, et al. Among authors: feng s. Nanoscale. 2015 Jun 7;7(21):9935-44. doi: 10.1039/c4nr07408d. Nanoscale. 2015. PMID: 25970803

10

Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge₂Sb₂Te₅ Thin Film.

Zheng Y, Cheng Y, Huang R, Qi R, Rao F, Ding K, Yin W, Song S, Liu W, Song Z, Feng S. Zheng Y, et al. Among authors: feng s. Sci Rep. 2017 Jul 19;7(1):5915. doi: 10.1038/s41598-017-06426-2. Sci Rep. 2017. PMID: 28725023 Free PMC article.

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