Dubrovskii VG - Search Results

1

Conditions for high yield of selective-area epitaxy InAs nanowires on SiO x /Si(111) substrates.

Robson MT, Dubrovskii VG, LaPierre RR. Robson MT, et al. Among authors: dubrovskii vg. Nanotechnology. 2015 Nov 20;26(46):465301. doi: 10.1088/0957-4484/26/46/465301. Epub 2015 Oct 28. Nanotechnology. 2015. PMID: 26508403

2

Photoluminescence properties of InAs nanowires grown on GaAs and Si substrates.

Sun MH, Leong ES, Chin AH, Ning CZ, Cirlin GE, Samsonenko YB, Dubrovskii VG, Chuang L, Chang-Hasnain C. Sun MH, et al. Among authors: dubrovskii vg. Nanotechnology. 2010 Aug 20;21(33):335705. doi: 10.1088/0957-4484/21/33/335705. Epub 2010 Jul 26. Nanotechnology. 2010. PMID: 20657047

3

Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy.

Lugani L, Ercolani D, Sorba L, Sibirev NV, Timofeeva MA, Dubrovskii VG. Lugani L, et al. Among authors: dubrovskii vg. Nanotechnology. 2012 Mar 9;23(9):095602. doi: 10.1088/0957-4484/23/9/095602. Epub 2012 Feb 10. Nanotechnology. 2012. PMID: 22322330

4

Control of morphology and crystal purity of InP nanowires by variation of phosphine flux during selective area MOMBE.

Kelrich A, Dubrovskii VG, Calahorra Y, Cohen S, Ritter D. Kelrich A, et al. Among authors: dubrovskii vg. Nanotechnology. 2015 Feb 27;26(8):085303. doi: 10.1088/0957-4484/26/8/085303. Epub 2015 Feb 4. Nanotechnology. 2015. PMID: 25648852

5

Catalyst-free growth of InAs nanowires on Si (111) by CBE.

Gomes UP, Ercolani D, Sibirev NV, Gemmi M, Dubrovskii VG, Beltram F, Sorba L. Gomes UP, et al. Among authors: dubrovskii vg. Nanotechnology. 2015 Oct 16;26(41):415604. doi: 10.1088/0957-4484/26/41/415604. Epub 2015 Sep 25. Nanotechnology. 2015. PMID: 26404459

6

Length distributions of Au-catalyzed and In-catalyzed InAs nanowires.

Dubrovskii VG, Sibirev NV, Berdnikov Y, Gomes UP, Ercolani D, Zannier V, Sorba L. Dubrovskii VG, et al. Nanotechnology. 2016 Sep 16;27(37):375602. doi: 10.1088/0957-4484/27/37/375602. Epub 2016 Aug 8. Nanotechnology. 2016. PMID: 27501469

7

Molecular beam epitaxy of InAs nanowires in SiO₂ nanotube templates: challenges and prospects for integration of III-Vs on Si.

Vukajlovic-Plestina J, Dubrovskii VG, Tütüncuoǧlu G, Potts H, Ricca R, Meyer F, Matteini F, Leran JB, I Morral AF. Vukajlovic-Plestina J, et al. Among authors: dubrovskii vg. Nanotechnology. 2016 Nov 11;27(45):455601. doi: 10.1088/0957-4484/27/45/455601. Epub 2016 Oct 4. Nanotechnology. 2016. PMID: 27698287

8

Three-fold Symmetric Doping Mechanism in GaAs Nanowires.

Dastjerdi MHT, Fiordaliso EM, Leshchenko ED, Akhtari-Zavareh A, Kasama T, Aagesen M, Dubrovskii VG, LaPierre RR. Dastjerdi MHT, et al. Among authors: dubrovskii vg. Nano Lett. 2017 Oct 11;17(10):5875-5882. doi: 10.1021/acs.nanolett.7b00794. Epub 2017 Sep 20. Nano Lett. 2017. PMID: 28903563

9

Tuning the morphology of self-assisted GaP nanowires.

Leshchenko ED, Kuyanov P, LaPierre RR, Dubrovskii VG. Leshchenko ED, et al. Among authors: dubrovskii vg. Nanotechnology. 2018 Jun 1;29(22):225603. doi: 10.1088/1361-6528/aab47b. Epub 2018 Mar 6. Nanotechnology. 2018. PMID: 29509146

10

Modeling selective-area growth of InAsSb nanowires.

Sokolovskii AS, Robson MT, LaPierre RR, Dubrovskii VG. Sokolovskii AS, et al. Among authors: dubrovskii vg. Nanotechnology. 2019 Jul 12;30(28):285601. doi: 10.1088/1361-6528/ab1375. Epub 2019 Mar 26. Nanotechnology. 2019. PMID: 30913550

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