Ueno K - Search Results

1

Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2.

Zhou L, Xu K, Zubair A, Liao AD, Fang W, Ouyang F, Lee YH, Ueno K, Saito R, Palacios T, Kong J, Dresselhaus MS. Zhou L, et al. Among authors: ueno k. J Am Chem Soc. 2015 Sep 23;137(37):11892-5. doi: 10.1021/jacs.5b07452. Epub 2015 Sep 9. J Am Chem Soc. 2015. PMID: 26305492

2

Extremely non-planar phthalocyanines with saddle or helical conformation: synthesis and structural characterizations.

Kobayashi N, Fukuda T, Ueno K, Ogino H. Kobayashi N, et al. Among authors: ueno k. J Am Chem Soc. 2001 Oct 31;123(43):10740-1. doi: 10.1021/ja0113753. J Am Chem Soc. 2001. PMID: 11674008 No abstract available.

3

Synthesis of High-Quality Large-Area Homogenous 1T' MoTe₂ from Chemical Vapor Deposition.

Zhou L, Zubair A, Wang Z, Zhang X, Ouyang F, Xu K, Fang W, Ueno K, Li J, Palacios T, Kong J, Dresselhaus MS. Zhou L, et al. Among authors: ueno k. Adv Mater. 2016 Nov;28(43):9526-9531. doi: 10.1002/adma.201602687. Epub 2016 Sep 13. Adv Mater. 2016. PMID: 27620354

4

Sensitive Phonon-Based Probe for Structure Identification of 1T' MoTe₂.

Zhou L, Huang S, Tatsumi Y, Wu L, Guo H, Bie YQ, Ueno K, Yang T, Zhu Y, Kong J, Saito R, Dresselhaus M. Zhou L, et al. Among authors: ueno k. J Am Chem Soc. 2017 Jun 28;139(25):8396-8399. doi: 10.1021/jacs.7b03445. Epub 2017 Jun 19. J Am Chem Soc. 2017. PMID: 28541698

5

Reversible and Precisely Controllable p/n-Type Doping of MoTe₂ Transistors through Electrothermal Doping.

Chang YM, Yang SH, Lin CY, Chen CH, Lien CH, Jian WB, Ueno K, Suen YW, Tsukagoshi K, Lin YF. Chang YM, et al. Among authors: ueno k. Adv Mater. 2018 Mar;30(13):e1706995. doi: 10.1002/adma.201706995. Epub 2018 Feb 12. Adv Mater. 2018. PMID: 29430746

6

Oxygen-Sensitive Layered MoTe₂ Channels for Environmental Detection.

Yang SH, Lin CY, Chang YM, Li M, Lee KC, Chen CF, Yang FS, Lien CH, Ueno K, Watanabe K, Taniguchi T, Tsukagoshi K, Lin YF. Yang SH, et al. Among authors: ueno k. ACS Appl Mater Interfaces. 2019 Dec 18;11(50):47047-47053. doi: 10.1021/acsami.9b15036. Epub 2019 Dec 4. ACS Appl Mater Interfaces. 2019. PMID: 31746187

7

Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors.

Nakaharai S, Yamamoto M, Ueno K, Lin YF, Li SL, Tsukagoshi K. Nakaharai S, et al. Among authors: ueno k. ACS Nano. 2015 Jun 23;9(6):5976-83. doi: 10.1021/acsnano.5b00736. Epub 2015 Jun 2. ACS Nano. 2015. PMID: 25988597

8

Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning.

Nakaharai S, Yamamoto M, Ueno K, Tsukagoshi K. Nakaharai S, et al. Among authors: ueno k. ACS Appl Mater Interfaces. 2016 Jun 15;8(23):14732-9. doi: 10.1021/acsami.6b02036. Epub 2016 Jun 2. ACS Appl Mater Interfaces. 2016. PMID: 27203118

9

Facile and Reversible Carrier-Type Manipulation of Layered MoTe₂ Toward Long-Term Stable Electronics.

Li M, Lin CY, Chang YM, Yang SH, Lee MP, Chen CF, Lee KC, Yang FS, Chou Y, Lin YC, Ueno K, Shi Y, Chou YC, Tsukagoshi K, Lin YF. Li M, et al. Among authors: ueno k. ACS Appl Mater Interfaces. 2020 Sep 23;12(38):42918-42924. doi: 10.1021/acsami.0c09922. Epub 2020 Sep 14. ACS Appl Mater Interfaces. 2020. PMID: 32864950

10

Mist chemical vapor deposition of crystalline MoS₂atomic layer films using sequential mist supply mode and its application in field-effect transistors.

Kuddus A, Rajib A, Yokoyama K, Shida T, Ueno K, Shirai H. Kuddus A, et al. Among authors: ueno k. Nanotechnology. 2021 Nov 2;33(4). doi: 10.1088/1361-6528/ac30f4. Nanotechnology. 2021. PMID: 34666322

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