Lim D - Search Results

1

Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices.

Rathi S, Lee I, Lim D, Wang J, Ochiai Y, Aoki N, Watanabe K, Taniguchi T, Lee GH, Yu YJ, Kim P, Kim GH. Rathi S, et al. Among authors: lim d. Nano Lett. 2015 Aug 12;15(8):5017-24. doi: 10.1021/acs.nanolett.5b01030. Epub 2015 Jul 1. Nano Lett. 2015. PMID: 26091357

2

Raman shift and electrical properties of MoS2 bilayer on boron nitride substrate.

Li L, Lee I, Lim D, Kang M, Kim GH, Aoki N, Ochiai Y, Watanabe K, Taniguchi T. Li L, et al. Among authors: lim d. Nanotechnology. 2015 Jul 24;26(29):295702. doi: 10.1088/0957-4484/26/29/295702. Epub 2015 Jul 2. Nanotechnology. 2015. PMID: 26136152

3

Non-degenerate n-type doping by hydrazine treatment in metal work function engineered WSe₂ field-effect transistor.

Lee I, Rathi S, Li L, Lim D, Khan MA, Kannan ES, Kim GH. Lee I, et al. Among authors: lim d. Nanotechnology. 2015 Nov 13;26(45):455203. doi: 10.1088/0957-4484/26/45/455203. Epub 2015 Oct 21. Nanotechnology. 2015. PMID: 26486939

4

Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe₂ /MoS₂ Heterostructure for Ambipolar Field-Effect Transistors.

Lee I, Rathi S, Lim D, Li L, Park J, Lee Y, Yi KS, Dhakal KP, Kim J, Lee C, Lee GH, Kim YD, Hone J, Yun SJ, Youn DH, Kim GH. Lee I, et al. Among authors: lim d. Adv Mater. 2016 Nov;28(43):9519-9525. doi: 10.1002/adma.201601949. Epub 2016 Sep 13. Adv Mater. 2016. PMID: 27619888

5

Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single-Layer MoS₂ Device.

Khan MA, Rathi S, Park J, Lim D, Lee Y, Yun SJ, Youn DH, Kim GH. Khan MA, et al. Among authors: lim d. ACS Appl Mater Interfaces. 2017 Aug 16;9(32):26983-26989. doi: 10.1021/acsami.7b06071. Epub 2017 Aug 1. ACS Appl Mater Interfaces. 2017. PMID: 28715168

6

Observation of negative differential resistance in mesoscopic graphene oxide devices.

Rathi S, Lee I, Kang M, Lim D, Lee Y, Yamacli S, Joh HI, Kim S, Kim SW, Yun SJ, Choi S, Kim GH. Rathi S, et al. Among authors: lim d. Sci Rep. 2018 May 8;8(1):7144. doi: 10.1038/s41598-018-22355-0. Sci Rep. 2018. PMID: 29739956 Free PMC article.

7

Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS₂/WSe₂ van der Waals Heterostructure.

Khan MA, Rathi S, Lee C, Lim D, Kim Y, Yun SJ, Youn DH, Kim GH. Khan MA, et al. Among authors: lim d. ACS Appl Mater Interfaces. 2018 Jul 18;10(28):23961-23967. doi: 10.1021/acsami.8b05549. Epub 2018 Jul 3. ACS Appl Mater Interfaces. 2018. PMID: 29938500

8

High performance MoS2-based field-effect transistor enabled by hydrazine doping.

Lim D, Kannan ES, Lee I, Rathi S, Li L, Lee Y, Khan MA, Kang M, Park J, Kim GH. Lim D, et al. Nanotechnology. 2016 Jun 3;27(22):225201. doi: 10.1088/0957-4484/27/22/225201. Epub 2016 Apr 21. Nanotechnology. 2016. PMID: 27098430

9

Tunable electrical properties of multilayer HfSe₂ field effect transistors by oxygen plasma treatment.

Kang M, Rathi S, Lee I, Li L, Khan MA, Lim D, Lee Y, Park J, Yun SJ, Youn DH, Jun C, Kim GH. Kang M, et al. Among authors: lim d. Nanoscale. 2017 Jan 26;9(4):1645-1652. doi: 10.1039/c6nr08467b. Nanoscale. 2017. PMID: 28074961

10

Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS₂ flake based field effect transistors on SiO₂ and hBN substrates.

Lee C, Rathi S, Khan MA, Lim D, Kim Y, Yun SJ, Youn DH, Watanabe K, Taniguchi T, Kim GH. Lee C, et al. Among authors: lim d. Nanotechnology. 2018 Aug 17;29(33):335202. doi: 10.1088/1361-6528/aac6b0. Epub 2018 May 22. Nanotechnology. 2018. PMID: 29786609

Save citations to file

Email citations

Send citations to clipboard

Add to Collections

Add to My Bibliography

Create a file for external citation management software

Your saved search

Your RSS Feed

My Custom Filters

Publication date

Text availability

Article attribute

Article type

Article Language

Species

Sex

Age

Other

4,805 results

Search Page

Filters