Lee GH - Search Results

1

Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

Lee GH, Cui X, Kim YD, Arefe G, Zhang X, Lee CH, Ye F, Watanabe K, Taniguchi T, Kim P, Hone J. Lee GH, et al. Among authors: lee ch. ACS Nano. 2015 Jul 28;9(7):7019-26. doi: 10.1021/acsnano.5b01341. Epub 2015 Jun 22. ACS Nano. 2015. PMID: 26083310

2

Inking elastomeric stamps with micro-patterned, single layer graphene to create high-performance OFETs.

Kang SJ, Kim B, Kim KS, Zhao Y, Chen Z, Lee GH, Hone J, Kim P, Nuckolls C. Kang SJ, et al. Among authors: lee gh. Adv Mater. 2011 Aug 16;23(31):3531-5. doi: 10.1002/adma.201101570. Epub 2011 Jul 4. Adv Mater. 2011. PMID: 21728192 No abstract available.

3

Tightly bound trions in monolayer MoS2.

Mak KF, He K, Lee C, Lee GH, Hone J, Heinz TF, Shan J. Mak KF, et al. Among authors: lee gh, lee c. Nat Mater. 2013 Mar;12(3):207-11. doi: 10.1038/nmat3505. Epub 2012 Dec 2. Nat Mater. 2013. PMID: 23202371

4

Effect of surface morphology on friction of graphene on various substrates.

Cho DH, Wang L, Kim JS, Lee GH, Kim ES, Lee S, Lee SY, Hone J, Lee C. Cho DH, et al. Among authors: lee sy, lee gh, lee s, lee c. Nanoscale. 2013 Apr 7;5(7):3063-9. doi: 10.1039/c3nr34181j. Nanoscale. 2013. PMID: 23462814

5

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices.

Choi MS, Lee GH, Yu YJ, Lee DY, Lee SH, Kim P, Hone J, Yoo WJ. Choi MS, et al. Among authors: lee dy, lee sh, lee gh. Nat Commun. 2013;4:1624. doi: 10.1038/ncomms2652. Nat Commun. 2013. PMID: 23535645 Free article.

6

Graphene metallization of high-stress silicon nitride resonators for electrical integration.

Lee S, Adiga VP, Barton RA, van der Zande AM, Lee GH, Ilic BR, Gondarenko A, Parpia JM, Craighead HG, Hone J. Lee S, et al. Among authors: lee gh. Nano Lett. 2013 Sep 11;13(9):4275-9. doi: 10.1021/nl4020414. Epub 2013 Aug 23. Nano Lett. 2013. PMID: 23905749

7

Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures.

Lee GH, Yu YJ, Cui X, Petrone N, Lee CH, Choi MS, Lee DY, Lee C, Yoo WJ, Watanabe K, Taniguchi T, Nuckolls C, Kim P, Hone J. Lee GH, et al. Among authors: lee ch, lee dy, lee c. ACS Nano. 2013 Sep 24;7(9):7931-6. doi: 10.1021/nn402954e. Epub 2013 Aug 14. ACS Nano. 2013. PMID: 23924287

8

Graphene mechanical oscillators with tunable frequency.

Chen C, Lee S, Deshpande VV, Lee GH, Lekas M, Shepard K, Hone J. Chen C, et al. Among authors: lee gh, lee s. Nat Nanotechnol. 2013 Dec;8(12):923-7. doi: 10.1038/nnano.2013.232. Epub 2013 Nov 17. Nat Nanotechnol. 2013. PMID: 24240431

9

Effect of defects on the intrinsic strength and stiffness of graphene.

Zandiatashbar A, Lee GH, An SJ, Lee S, Mathew N, Terrones M, Hayashi T, Picu CR, Hone J, Koratkar N. Zandiatashbar A, et al. Among authors: lee gh, lee s. Nat Commun. 2014;5:3186. doi: 10.1038/ncomms4186. Nat Commun. 2014. PMID: 24458268 Free article.

10

Atomically thin p-n junctions with van der Waals heterointerfaces.

Lee CH, Lee GH, van der Zande AM, Chen W, Li Y, Han M, Cui X, Arefe G, Nuckolls C, Heinz TF, Guo J, Hone J, Kim P. Lee CH, et al. Among authors: lee gh. Nat Nanotechnol. 2014 Sep;9(9):676-81. doi: 10.1038/nnano.2014.150. Epub 2014 Aug 10. Nat Nanotechnol. 2014. PMID: 25108809

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