Kim P - Search Results

1

Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

Lee GH, Cui X, Kim YD, Arefe G, Zhang X, Lee CH, Ye F, Watanabe K, Taniguchi T, Kim P, Hone J. Lee GH, et al. Among authors: kim p, kim yd. ACS Nano. 2015 Jul 28;9(7):7019-26. doi: 10.1021/acsnano.5b01341. Epub 2015 Jun 22. ACS Nano. 2015. PMID: 26083310

2

Scaling of resistance and electron mean free path of single-walled carbon nanotubes.

Purewal MS, Hong BH, Ravi A, Chandra B, Hone J, Kim P. Purewal MS, et al. Among authors: kim p. Phys Rev Lett. 2007 May 4;98(18):186808. doi: 10.1103/PhysRevLett.98.186808. Epub 2007 May 4. Phys Rev Lett. 2007. PMID: 17501598

3

Molecular-scale quantum dots from carbon nanotube heterojunctions.

Chandra B, Bhattacharjee J, Purewal M, Son YW, Wu Y, Huang M, Yan H, Heinz TF, Kim P, Neaton JB, Hone J. Chandra B, et al. Among authors: kim p. Nano Lett. 2009 Apr;9(4):1544-8. doi: 10.1021/nl803639h. Nano Lett. 2009. PMID: 19278212

4

Performance of monolayer graphene nanomechanical resonators with electrical readout.

Chen C, Rosenblatt S, Bolotin KI, Kalb W, Kim P, Kymissis I, Stormer HL, Heinz TF, Hone J. Chen C, et al. Among authors: kim p. Nat Nanotechnol. 2009 Dec;4(12):861-7. doi: 10.1038/nnano.2009.267. Epub 2009 Sep 20. Nat Nanotechnol. 2009. PMID: 19893525

5

Channel length scaling in graphene field-effect transistors studied with pulsed current-voltage measurements.

Meric I, Dean CR, Young AF, Baklitskaya N, Tremblay NJ, Nuckolls C, Kim P, Shepard KL. Meric I, et al. Among authors: kim p. Nano Lett. 2011 Mar 9;11(3):1093-7. doi: 10.1021/nl103993z. Epub 2011 Jan 27. Nano Lett. 2011. PMID: 21271736

6

Large physisorption strain in chemical vapor deposition of graphene on copper substrates.

He R, Zhao L, Petrone N, Kim KS, Roth M, Hone J, Kim P, Pasupathy A, Pinczuk A. He R, et al. Among authors: kim ks, kim p. Nano Lett. 2012 May 9;12(5):2408-13. doi: 10.1021/nl300397v. Epub 2012 Apr 13. Nano Lett. 2012. PMID: 22494089

7

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices.

Choi MS, Lee GH, Yu YJ, Lee DY, Lee SH, Kim P, Hone J, Yoo WJ. Choi MS, et al. Among authors: kim p. Nat Commun. 2013;4:1624. doi: 10.1038/ncomms2652. Nat Commun. 2013. PMID: 23535645 Free article.

8

Direct imaging of charged impurity density in common graphene substrates.

Burson KM, Cullen WG, Adam S, Dean CR, Watanabe K, Taniguchi T, Kim P, Fuhrer MS. Burson KM, et al. Among authors: kim p. Nano Lett. 2013 Aug 14;13(8):3576-80. doi: 10.1021/nl4012529. Epub 2013 Aug 1. Nano Lett. 2013. PMID: 23879288

9

Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures.

Lee GH, Yu YJ, Cui X, Petrone N, Lee CH, Choi MS, Lee DY, Lee C, Yoo WJ, Watanabe K, Taniguchi T, Nuckolls C, Kim P, Hone J. Lee GH, et al. Among authors: kim p. ACS Nano. 2013 Sep 24;7(9):7931-6. doi: 10.1021/nn402954e. Epub 2013 Aug 14. ACS Nano. 2013. PMID: 23924287

10

Epitaxial growth of molecular crystals on van der waals substrates for high-performance organic electronics.

Lee CH, Schiros T, Santos EJ, Kim B, Yager KG, Kang SJ, Lee S, Yu J, Watanabe K, Taniguchi T, Hone J, Kaxiras E, Nuckolls C, Kim P. Lee CH, et al. Among authors: kim b, kim p. Adv Mater. 2014 May;26(18):2812-7. doi: 10.1002/adma.201304973. Epub 2014 Jan 23. Adv Mater. 2014. PMID: 24458727

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