Fernández-Garrido S - Search Results

1

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes.

Musolino M, Tahraoui A, Fernández-Garrido S, Brandt O, Trampert A, Geelhaar L, Riechert H. Musolino M, et al. Nanotechnology. 2015 Feb 27;26(8):085605. doi: 10.1088/0957-4484/26/8/085605. Epub 2015 Feb 6. Nanotechnology. 2015. PMID: 25656795

2

Columnar AlGaN/GaN nanocavities with AlN/GaN Bragg reflectors grown by molecular beam epitaxy on Si(111).

Ristić J, Calleja E, Trampert A, Fernández-Garrido S, Rivera C, Jahn U, Ploog KH. Ristić J, et al. Phys Rev Lett. 2005 Apr 15;94(14):146102. doi: 10.1103/PhysRevLett.94.146102. Epub 2005 Apr 12. Phys Rev Lett. 2005. PMID: 15904080

3

Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity.

Fernández-Garrido S, Kong X, Gotschke T, Calarco R, Geelhaar L, Trampert A, Brandt O. Fernández-Garrido S, et al. Nano Lett. 2012 Dec 12;12(12):6119-25. doi: 10.1021/nl302664q. Epub 2012 Nov 9. Nano Lett. 2012. PMID: 23130785

4

Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy.

Fernández-Garrido S, Kaganer VM, Sabelfeld KK, Gotschke T, Grandal J, Calleja E, Geelhaar L, Brandt O. Fernández-Garrido S, et al. Nano Lett. 2013 Jul 10;13(7):3274-80. doi: 10.1021/nl401483e. Epub 2013 Jun 17. Nano Lett. 2013. PMID: 23758601

5

Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence.

Fernández-Garrido S, Kaganer VM, Hauswald C, Jenichen B, Ramsteiner M, Consonni V, Geelhaar L, Brandt O. Fernández-Garrido S, et al. Nanotechnology. 2014 Nov 14;25(45):455702. doi: 10.1088/0957-4484/25/45/455702. Epub 2014 Oct 20. Nanotechnology. 2014. PMID: 25327280

6

Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles.

Fernández-Garrido S, Zettler JK, Geelhaar L, Brandt O. Fernández-Garrido S, et al. Nano Lett. 2015 Mar 11;15(3):1930-7. doi: 10.1021/nl504778s. Epub 2015 Feb 17. Nano Lett. 2015. PMID: 25671678

7

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film.

Wölz M, Hauswald C, Flissikowski T, Gotschke T, Fernández-Garrido S, Brandt O, Grahn HT, Geelhaar L, Riechert H. Wölz M, et al. Nano Lett. 2015 Jun 10;15(6):3743-7. doi: 10.1021/acs.nanolett.5b00251. Epub 2015 May 29. Nano Lett. 2015. PMID: 26001039

8

Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process.

Zettler JK, Corfdir P, Geelhaar L, Riechert H, Brandt O, Fernández-Garrido S. Zettler JK, et al. Nanotechnology. 2015 Nov 6;26(44):445604. doi: 10.1088/0957-4484/26/44/445604. Epub 2015 Oct 12. Nanotechnology. 2015. PMID: 26457772

9

Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature.

Zettler JK, Corfdir P, Hauswald C, Luna E, Jahn U, Flissikowski T, Schmidt E, Ronning C, Trampert A, Geelhaar L, Grahn HT, Brandt O, Fernández-Garrido S. Zettler JK, et al. Nano Lett. 2016 Feb 10;16(2):973-80. doi: 10.1021/acs.nanolett.5b03931. Epub 2016 Jan 6. Nano Lett. 2016. PMID: 26675526

10

Nucleation, Growth, and Bundling of GaN Nanowires in Molecular Beam Epitaxy: Disentangling the Origin of Nanowire Coalescence.

Kaganer VM, Fernández-Garrido S, Dogan P, Sabelfeld KK, Brandt O. Kaganer VM, et al. Nano Lett. 2016 Jun 8;16(6):3717-25. doi: 10.1021/acs.nanolett.6b01044. Epub 2016 May 13. Nano Lett. 2016. PMID: 27168127

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