Senz S - Search Results

1

Epitaxial growth of vertically free-standing ultra-thin silicon nanowires.

Zhou Q, Liu L, Gao X, Chen L, Senz S, Zhang Z, Liu J. Zhou Q, et al. Among authors: senz s. Nanotechnology. 2015 Feb 20;26(7):075707. doi: 10.1088/0957-4484/26/7/075707. Epub 2015 Feb 2. Nanotechnology. 2015. PMID: 25643177

2

Epitaxial growth of silicon nanowires using an aluminium catalyst.

Wang Y, Schmidt V, Senz S, Gösele U. Wang Y, et al. Among authors: senz s. Nat Nanotechnol. 2006 Dec;1(3):186-9. doi: 10.1038/nnano.2006.133. Epub 2006 Nov 26. Nat Nanotechnol. 2006. PMID: 18654184

3

Vertical epitaxial wire-on-wire growth of Ge/Si on Si(100) substrate.

Shimizu T, Zhang Z, Shingubara S, Senz S, Gösele U. Shimizu T, et al. Among authors: senz s. Nano Lett. 2009 Apr;9(4):1523-6. doi: 10.1021/nl8035756. Nano Lett. 2009. PMID: 19296610

4

Ordered arrays of vertically aligned [110] silicon nanowires by suppressing the crystallographically preferred <100> etching directions.

Huang Z, Shimizu T, Senz S, Zhang Z, Zhang X, Lee W, Geyer N, Gösele U. Huang Z, et al. Among authors: senz s. Nano Lett. 2009 Jul;9(7):2519-25. doi: 10.1021/nl803558n. Nano Lett. 2009. PMID: 19480399

5

Synthesis of silicon nanotubes with cobalt silicide ends using anodized aluminum oxide template.

Zhang Z, Liu L, Shimizu T, Senz S, Gösele U. Zhang Z, et al. Among authors: senz s. Nanotechnology. 2010 Feb 5;21(5):055603. doi: 10.1088/0957-4484/21/5/055603. Epub 2009 Dec 21. Nanotechnology. 2010. PMID: 20023312

6

Highly reproducible surface-enhanced Raman scattering substrate for detection of phenolic pollutants.

Zeng Z, Dan Tang, Liu L, Wang Y, Zhou Q, Su S, Hu D, Han B, Jin M, Ao X, Zhan R, Gao X, Lu X, Zhou G, Senz S, Zhang Z, Liu J. Zeng Z, et al. Among authors: senz s. Nanotechnology. 2016 Nov 11;27(45):455301. doi: 10.1088/0957-4484/27/45/455301. Epub 2016 Oct 4. Nanotechnology. 2016. PMID: 27698285

7

Preparation of nanowire specimens for laser-assisted atom probe tomography.

Blumtritt H, Isheim D, Senz S, Seidman DN, Moutanabbir O. Blumtritt H, et al. Among authors: senz s. Nanotechnology. 2014 Oct 31;25(43):435704. doi: 10.1088/0957-4484/25/43/435704. Epub 2014 Oct 9. Nanotechnology. 2014. PMID: 25299058

8

Measurement of the bending strength of vapor-liquid-solid grown silicon nanowires.

Hoffmann S, Utke I, Moser B, Michler J, Christiansen SH, Schmidt V, Senz S, Werner P, Gösele U, Ballif C. Hoffmann S, et al. Among authors: senz s. Nano Lett. 2006 Apr;6(4):622-5. doi: 10.1021/nl052223z. Nano Lett. 2006. PMID: 16608255 Free article.

9

Thermal Conductivity in Biphasic Silicon Nanowires.

Mukherjee S, Zhang Z, Wajs M, Spadaro MC, Gonzalez-Catala M, Givan U, Senz S, Arbiol J, Francoeur S, Volz S, Moutanabbir O. Mukherjee S, et al. Among authors: senz s. Nano Lett. 2024 Nov 20;24(46):14648-14655. doi: 10.1021/acs.nanolett.4c03720. Epub 2024 Nov 8. Nano Lett. 2024. PMID: 39514696

10

Realization of a silicon nanowire vertical surround-gate field-effect transistor.

Schmidt V, Riel H, Senz S, Karg S, Riess W, Gösele U. Schmidt V, et al. Among authors: senz s. Small. 2006 Jan;2(1):85-8. doi: 10.1002/smll.200500181. Small. 2006. PMID: 17193560 No abstract available.

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