Ge B - Search Results

1

Study of point spread in the aberration-corrected transmission electron microscopy.

Ge B, Wang Y, Chang Y, Yao Y. Ge B, et al. Microsc Microanal. 2014 Oct;20(5):1447-52. doi: 10.1017/S1431927614012823. Microsc Microanal. 2014. PMID: 25256649

2

Determining polarity and dislocation core structures at atomic level for epitaxial AlN/(0001)6H-SiC from a single image in HRTEM.

Cui YX, Wang YM, Wen C, Ge BH, Li FH, Chen Y, Chen H. Cui YX, et al. Among authors: ge bh. Ultramicroscopy. 2013 Mar;126:77-84. doi: 10.1016/j.ultramic.2012.11.008. Epub 2012 Nov 23. Ultramicroscopy. 2013. PMID: 23500191

3

Atomic resolution imaging of oxygen atoms close to heavy atoms by HRTEM and ED, using the superconductor SmFeAsO0.85F0.15 as an example.

Wang Y, Ge B, Che G. Wang Y, et al. Among authors: ge b. Micron. 2015 Apr;71:32-8. doi: 10.1016/j.micron.2015.01.001. Epub 2015 Jan 14. Micron. 2015. PMID: 25635603

4

Determination of the incommensurate modulated structure of Bi(2)Sr(1.6)La(0.4)CuO(6+δ) by aberration-corrected transmission electron microscopy.

Ge B, Wang Y, Luo H, Wen H, Yu R, Cheng Z, Zhu J. Ge B, et al. Ultramicroscopy. 2015 Dec;159 Pt 1:67-72. doi: 10.1016/j.ultramic.2015.08.004. Epub 2015 Aug 25. Ultramicroscopy. 2015. PMID: 26327691

5

Atom-Thin SnS2-xSex with Adjustable Compositions by Direct Liquid Exfoliation from Single Crystals.

Yang Z, Liang H, Wang X, Ma X, Zhang T, Yang Y, Xie L, Chen D, Long Y, Chen J, Chang Y, Yan C, Zhang X, Zhang X, Ge B, Ren Z, Xue M, Chen G. Yang Z, et al. Among authors: ge b. ACS Nano. 2016 Jan 26;10(1):755-62. doi: 10.1021/acsnano.5b05823. Epub 2015 Dec 24. ACS Nano. 2016. PMID: 26690902

6

STEM image simulation with hybrid CPU/GPU programming.

Yao Y, Ge BH, Shen X, Wang YG, Yu RC. Yao Y, et al. Among authors: ge bh. Ultramicroscopy. 2016 Jul;166:1-8. doi: 10.1016/j.ultramic.2016.04.001. Epub 2016 Apr 14. Ultramicroscopy. 2016. PMID: 27093687

7

Thermoelectric performance enhancement of Mg2Sn based solid solutions by band convergence and phonon scattering via Pb and Si/Ge substitution for Sn.

Mao J, Wang Y, Ge B, Jie Q, Liu Z, Saparamadu U, Liu W, Ren Z. Mao J, et al. Among authors: ge b. Phys Chem Chem Phys. 2016 Jul 27;18(30):20726-37. doi: 10.1039/c6cp03944h. Phys Chem Chem Phys. 2016. PMID: 27412367

8

Investigation of non-linear imaging in high-resolution transmission electron microscopy.

Chang Y, Wang Y, Cui Y, Ge B. Chang Y, et al. Among authors: ge b. Microscopy (Oxf). 2016 Dec;65(6):465-472. doi: 10.1093/jmicro/dfw032. Epub 2016 Sep 1. Microscopy (Oxf). 2016. PMID: 27587507

9

Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics.

Chen Z, Ge B, Li W, Lin S, Shen J, Chang Y, Hanus R, Snyder GJ, Pei Y. Chen Z, et al. Among authors: ge b. Nat Commun. 2017 Jan 4;8:13828. doi: 10.1038/ncomms13828. Nat Commun. 2017. PMID: 28051063 Free PMC article.

10

Promoting SnTe as an Eco-Friendly Solution for p-PbTe Thermoelectric via Band Convergence and Interstitial Defects.

Li W, Zheng L, Ge B, Lin S, Zhang X, Chen Z, Chang Y, Pei Y. Li W, et al. Among authors: ge b. Adv Mater. 2017 May;29(17). doi: 10.1002/adma.201605887. Epub 2017 Mar 1. Adv Mater. 2017. PMID: 28247491

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