Feng S - Search Results

1

Understanding phase-change behaviors of carbon-doped Ge₂Sb₂Te₅ for phase-change memory application.

Zhou X, Xia M, Rao F, Wu L, Li X, Song Z, Feng S, Sun H. Zhou X, et al. Among authors: feng s. ACS Appl Mater Interfaces. 2014 Aug 27;6(16):14207-14. doi: 10.1021/am503502q. Epub 2014 Aug 14. ACS Appl Mater Interfaces. 2014. PMID: 25090618

2

Reversible Phase Change Characteristics of Cr-Doped Sb2Te3 Films with Different Initial States Induced by Femtosecond Pulses.

Wang Q, Jiang M, Liu B, Wang Y, Zheng Y, Song S, Wu Y, Song Z, Feng S. Wang Q, et al. Among authors: feng s. ACS Appl Mater Interfaces. 2016 Aug 17;8(32):20885-93. doi: 10.1021/acsami.6b06667. Epub 2016 Aug 4. ACS Appl Mater Interfaces. 2016. PMID: 27459421

3

Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory.

Cheng Y, Cai D, Zheng Y, Yan S, Wu L, Li C, Song W, Xin T, Lv S, Huang R, Lv H, Song Z, Feng S. Cheng Y, et al. Among authors: feng s. ACS Appl Mater Interfaces. 2020 May 20;12(20):23051-23059. doi: 10.1021/acsami.0c02507. Epub 2020 May 7. ACS Appl Mater Interfaces. 2020. PMID: 32340441

4

O-doped Si2Sb2Te5 nano-composite phase change material for application of chalcogenide random access memory.

Zhang T, Song Z, Liu B, Wang F, Feng S. Zhang T, et al. Among authors: feng s. J Nanosci Nanotechnol. 2009 Feb;9(2):1090-3. doi: 10.1166/jnn.2009.c094. J Nanosci Nanotechnol. 2009. PMID: 19441462

5

Programming voltage reduction in phase change memory cells with tungsten trioxide bottom heating layer/electrode.

Rao F, Song Z, Gong Y, Wu L, Feng S, Chen B. Rao F, et al. Among authors: feng s. Nanotechnology. 2008 Nov 5;19(44):445706. doi: 10.1088/0957-4484/19/44/445706. Epub 2008 Sep 30. Nanotechnology. 2008. PMID: 21832748

6

Design of side bottom-electrode-contact for high density phase-change memory array.

Liu Y, Song Z, Liu B, Xu J, Chen H, Zhang C, Wu G, Feng S. Liu Y, et al. Among authors: feng s. J Nanosci Nanotechnol. 2012 Oct;12(10):7939-43. doi: 10.1166/jnn.2012.6641. J Nanosci Nanotechnol. 2012. PMID: 23421160

7

One order of magnitude faster phase change at reduced power in Ti-Sb-Te.

Zhu M, Xia M, Rao F, Li X, Wu L, Ji X, Lv S, Song Z, Feng S, Sun H, Zhang S. Zhu M, et al. Among authors: feng s. Nat Commun. 2014 Jul 8;5:4086. doi: 10.1038/ncomms5086. Nat Commun. 2014. PMID: 25001009 Free PMC article.

8

Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon.

Song S, Yao D, Song Z, Gao L, Zhang Z, Li L, Shen L, Wu L, Liu B, Cheng Y, Feng S. Song S, et al. Among authors: feng s. Nanoscale Res Lett. 2015 Feb 28;10:89. doi: 10.1186/s11671-015-0815-5. eCollection 2015. Nanoscale Res Lett. 2015. PMID: 25852385 Free PMC article.

9

Understanding the crystallization behavior of as-deposited Ti-Sb-Te alloys through real-time radial distribution functions.

Zhu M, Xia M, Song Z, Cheng Y, Wu L, Rao F, Song S, Wang M, Lu Y, Feng S. Zhu M, et al. Among authors: feng s. Nanoscale. 2015 Jun 7;7(21):9935-44. doi: 10.1039/c4nr07408d. Nanoscale. 2015. PMID: 25970803

10

Direct observation of titanium-centered octahedra in titanium-antimony-tellurium phase-change material.

Rao F, Song Z, Cheng Y, Liu X, Xia M, Li W, Ding K, Feng X, Zhu M, Feng S. Rao F, et al. Among authors: feng x, feng s. Nat Commun. 2015 Nov 27;6:10040. doi: 10.1038/ncomms10040. Nat Commun. 2015. PMID: 26610374 Free PMC article.

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