Lehmann S - Search Results

1

Crystal structure tuning in GaAs nanowires using HCl.

Jacobsson D, Lehmann S, Dick KA. Jacobsson D, et al. Among authors: lehmann s. Nanoscale. 2014 Jul 21;6(14):8257-64. doi: 10.1039/c4nr00991f. Nanoscale. 2014. PMID: 24931099

2

Growth of InAs/InP core-shell nanowires with various pure crystal structures.

Gorji Ghalamestani S, Heurlin M, Wernersson LE, Lehmann S, Dick KA. Gorji Ghalamestani S, et al. Among authors: lehmann s. Nanotechnology. 2012 Jul 20;23(28):285601. doi: 10.1088/0957-4484/23/28/285601. Epub 2012 Jun 21. Nanotechnology. 2012. PMID: 22717421

3

A general approach for sharp crystal phase switching in InAs, GaAs, InP, and GaP nanowires using only group V flow.

Lehmann S, Wallentin J, Jacobsson D, Deppert K, Dick KA. Lehmann S, et al. Nano Lett. 2013 Sep 11;13(9):4099-105. doi: 10.1021/nl401554w. Epub 2013 Aug 7. Nano Lett. 2013. PMID: 23902379

4

Direct imaging of atomic scale structure and electronic properties of GaAs wurtzite and zinc blende nanowire surfaces.

Hjort M, Lehmann S, Knutsson J, Timm R, Jacobsson D, Lundgren E, Dick KA, Mikkelsen A. Hjort M, et al. Among authors: lehmann s. Nano Lett. 2013 Sep 11;13(9):4492-8. doi: 10.1021/nl402424x. Epub 2013 Aug 15. Nano Lett. 2013. PMID: 23941328

5

Crystal phase-dependent nanophotonic resonances in InAs nanowire arrays.

Anttu N, Lehmann S, Storm K, Dick KA, Samuelson L, Wu PM, Pistol ME. Anttu N, et al. Among authors: lehmann s. Nano Lett. 2014 Oct 8;14(10):5650-5. doi: 10.1021/nl502306x. Epub 2014 Sep 2. Nano Lett. 2014. PMID: 25158002

6

Electronic and structural differences between wurtzite and zinc blende InAs nanowire surfaces: experiment and theory.

Hjort M, Lehmann S, Knutsson J, Zakharov AA, Du YA, Sakong S, Timm R, Nylund G, Lundgren E, Kratzer P, Dick KA, Mikkelsen A. Hjort M, et al. Among authors: lehmann s. ACS Nano. 2014 Dec 23;8(12):12346-55. doi: 10.1021/nn504795v. Epub 2014 Dec 4. ACS Nano. 2014. PMID: 25406069 Free PMC article.

7

Atomic scale surface structure and morphology of InAs nanowire crystal superlattices: the effect of epitaxial overgrowth.

Knutsson JV, Lehmann S, Hjort M, Reinke P, Lundgren E, Dick KA, Timm R, Mikkelsen A. Knutsson JV, et al. Among authors: lehmann s. ACS Appl Mater Interfaces. 2015 Mar 18;7(10):5748-55. doi: 10.1021/am507931z. Epub 2015 Mar 6. ACS Appl Mater Interfaces. 2015. PMID: 25710727 Free PMC article.

8

Confinement in thickness-controlled GaAs polytype nanodots.

Vainorius N, Lehmann S, Jacobsson D, Samuelson L, Dick KA, Pistol ME. Vainorius N, et al. Among authors: lehmann s. Nano Lett. 2015 Apr 8;15(4):2652-6. doi: 10.1021/acs.nanolett.5b00253. Epub 2015 Mar 30. Nano Lett. 2015. PMID: 25761051

9

Sn-Seeded GaAs Nanowires as Self-Assembled Radial p-n Junctions.

Sun R, Jacobsson D, Chen IJ, Nilsson M, Thelander C, Lehmann S, Dick KA. Sun R, et al. Among authors: lehmann s. Nano Lett. 2015 Jun 10;15(6):3757-62. doi: 10.1021/acs.nanolett.5b00276. Epub 2015 Jun 1. Nano Lett. 2015. PMID: 25989532 Free PMC article.

10

Selective GaSb radial growth on crystal phase engineered InAs nanowires.

Namazi L, Nilsson M, Lehmann S, Thelander C, Dick KA. Namazi L, et al. Among authors: lehmann s. Nanoscale. 2015 Jun 21;7(23):10472-81. doi: 10.1039/c5nr01165e. Nanoscale. 2015. PMID: 26006335

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