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Page 1
Domain dynamics during ferroelectric switching.
Nelson CT, Gao P, Jokisaari JR, Heikes C, Adamo C, Melville A, Baek SH, Folkman CM, Winchester B, Gu Y, Liu Y, Zhang K, Wang E, Li J, Chen LQ, Eom CB, Schlom DG, Pan X. Nelson CT, et al. Science. 2011 Nov 18;334(6058):968-71. doi: 10.1126/science.1206980. Science. 2011. PMID: 22096196
Direct observations of retention failure in ferroelectric memories.
Gao P, Nelson CT, Jokisaari JR, Zhang Y, Baek SH, Bark CW, Wang E, Liu Y, Li J, Eom CB, Pan X. Gao P, et al. Among authors: nelson ct. Adv Mater. 2012 Feb 21;24(8):1106-10. doi: 10.1002/adma.201103983. Adv Mater. 2012. PMID: 22331626 Free article.
Spatially resolved steady-state negative capacitance.
Yadav AK, Nguyen KX, Hong Z, García-Fernández P, Aguado-Puente P, Nelson CT, Das S, Prasad B, Kwon D, Cheema S, Khan AI, Hu C, Íñiguez J, Junquera J, Chen LQ, Muller DA, Ramesh R, Salahuddin S. Yadav AK, et al. Among authors: nelson ct. Nature. 2019 Jan;565(7740):468-471. doi: 10.1038/s41586-018-0855-y. Epub 2019 Jan 14. Nature. 2019. PMID: 30643207
Ferroelastic switching for nanoscale non-volatile magnetoelectric devices.
Baek SH, Jang HW, Folkman CM, Li YL, Winchester B, Zhang JX, He Q, Chu YH, Nelson CT, Rzchowski MS, Pan XQ, Ramesh R, Chen LQ, Eom CB. Baek SH, et al. Among authors: nelson ct. Nat Mater. 2010 Apr;9(4):309-14. doi: 10.1038/nmat2703. Epub 2010 Feb 28. Nat Mater. 2010. PMID: 20190772
139 results