Zhou Z - Search Results

1

Mobility improvement and temperature dependence in MoSe2 field-effect transistors on parylene-C substrate.

Chamlagain B, Li Q, Ghimire NJ, Chuang HJ, Perera MM, Tu H, Xu Y, Pan M, Xiao D, Yan J, Mandrus D, Zhou Z. Chamlagain B, et al. Among authors: zhou z. ACS Nano. 2014 May 27;8(5):5079-88. doi: 10.1021/nn501150r. Epub 2014 Apr 16. ACS Nano. 2014. PMID: 24730685

2

Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating.

Perera MM, Lin MW, Chuang HJ, Chamlagain BP, Wang C, Tan X, Cheng MM, Tománek D, Zhou Z. Perera MM, et al. Among authors: zhou z. ACS Nano. 2013 May 28;7(5):4449-58. doi: 10.1021/nn401053g. Epub 2013 Apr 23. ACS Nano. 2013. PMID: 23590723

3

High mobility WSe2 p- and n-type field-effect transistors contacted by highly doped graphene for low-resistance contacts.

Chuang HJ, Tan X, Ghimire NJ, Perera MM, Chamlagain B, Cheng MM, Yan J, Mandrus D, Tománek D, Zhou Z. Chuang HJ, et al. Among authors: zhou z. Nano Lett. 2014 Jun 11;14(6):3594-601. doi: 10.1021/nl501275p. Epub 2014 May 22. Nano Lett. 2014. PMID: 24844426

4

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors.

Chuang HJ, Chamlagain B, Koehler M, Perera MM, Yan J, Mandrus D, Tománek D, Zhou Z. Chuang HJ, et al. Among authors: zhou z. Nano Lett. 2016 Mar 9;16(3):1896-902. doi: 10.1021/acs.nanolett.5b05066. Epub 2016 Feb 10. Nano Lett. 2016. PMID: 26844954

5

Optimizing Charge Injection across Transition Metal Dichalcogenide Heterojunctions: Theory and Experiment.

Guan J, Chuang HJ, Zhou Z, Tománek D. Guan J, et al. Among authors: zhou z. ACS Nano. 2017 Apr 25;11(4):3904-3910. doi: 10.1021/acsnano.7b00285. Epub 2017 Mar 23. ACS Nano. 2017. PMID: 28319662

6

Low-Temperature 2D/2D Ohmic Contacts in WSe₂ Field-Effect Transistors as a Platform for the 2D Metal-Insulator Transition.

Stanley LJ, Chuang HJ, Zhou Z, Koehler MR, Yan J, Mandrus DG, Popović D. Stanley LJ, et al. Among authors: zhou z. ACS Appl Mater Interfaces. 2021 Mar 3;13(8):10594-10602. doi: 10.1021/acsami.0c21440. Epub 2021 Feb 22. ACS Appl Mater Interfaces. 2021. PMID: 33617715

7

Plasmonic Hot Electron Induced Photocurrent Response at MoS2-Metal Junctions.

Hong T, Chamlagain B, Hu S, Weiss SM, Zhou Z, Xu YQ. Hong T, et al. Among authors: zhou z. ACS Nano. 2015 May 26;9(5):5357-63. doi: 10.1021/acsnano.5b01065. Epub 2015 Apr 20. ACS Nano. 2015. PMID: 25871507

8

Ultrathin and Atomically Flat Transition-Metal Oxide: Promising Building Blocks for Metal-Insulator Electronics.

Cui Q, Sakhdari M, Chamlagain B, Chuang HJ, Liu Y, Cheng MM, Zhou Z, Chen PY. Cui Q, et al. Among authors: zhou z. ACS Appl Mater Interfaces. 2016 Dec 21;8(50):34552-34558. doi: 10.1021/acsami.6b11302. Epub 2016 Dec 7. ACS Appl Mater Interfaces. 2016. PMID: 27998149

9

The performance of in situ grown Schottky-barrier single wall carbon nanotube field-effect transistors.

Zhou Z, Eres G, Jin R, Subedi A, Mandrus D, Kim EH. Zhou Z, et al. Nanotechnology. 2009 Feb 25;20(8):085709. doi: 10.1088/0957-4484/20/8/085709. Epub 2009 Feb 3. Nanotechnology. 2009. PMID: 19417470

10

Polarized photocurrent response in black phosphorus field-effect transistors.

Hong T, Chamlagain B, Lin W, Chuang HJ, Pan M, Zhou Z, Xu YQ. Hong T, et al. Among authors: zhou z. Nanoscale. 2014 Aug 7;6(15):8978-83. doi: 10.1039/c4nr02164a. Nanoscale. 2014. PMID: 24967826

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