Wong-Leung J - Search Results

1

Direct observation of charge-carrier heating at WZ-ZB InP nanowire heterojunctions.

Yong CK, Wong-Leung J, Joyce HJ, Lloyd-Hughes J, Gao Q, Tan HH, Jagadish C, Johnston MB, Herz LM. Yong CK, et al. Nano Lett. 2013 Sep 11;13(9):4280-7. doi: 10.1021/nl402050q. Epub 2013 Aug 12. Nano Lett. 2013. PMID: 23919626

2

Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters.

Joyce HJ, Wong-Leung J, Gao Q, Tan HH, Jagadish C. Joyce HJ, et al. Nano Lett. 2010 Mar 10;10(3):908-15. doi: 10.1021/nl903688v. Nano Lett. 2010. PMID: 20131909

3

Growth and characterization of self-assembled InAs/InP quantum dot structures.

Barik S, Tan HH, Wong-Leung J, Jagadish C. Barik S, et al. J Nanosci Nanotechnol. 2010 Mar;10(3):1525-36. doi: 10.1166/jnn.2010.2024. J Nanosci Nanotechnol. 2010. PMID: 20355541

4

Growth of straight InAs-on-GaAs nanowire heterostructures.

Messing ME, Wong-Leung J, Zanolli Z, Joyce HJ, Tan HH, Gao Q, Wallenberg LR, Johansson J, Jagadish C. Messing ME, et al. Nano Lett. 2011 Sep 14;11(9):3899-905. doi: 10.1021/nl202051w. Epub 2011 Jul 28. Nano Lett. 2011. PMID: 21786786

5

Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.

Joyce HJ, Wong-Leung J, Yong CK, Docherty CJ, Paiman S, Gao Q, Tan HH, Jagadish C, Lloyd-Hughes J, Herz LM, Johnston MB. Joyce HJ, et al. Nano Lett. 2012 Oct 10;12(10):5325-30. doi: 10.1021/nl3026828. Epub 2012 Sep 13. Nano Lett. 2012. PMID: 22962963

6

Polarization tunable, multicolor emission from core-shell photonic III-V semiconductor nanowires.

Mokkapati S, Saxena D, Jiang N, Parkinson P, Wong-Leung J, Gao Q, Tan HH, Jagadish C. Mokkapati S, et al. Nano Lett. 2012 Dec 12;12(12):6428-31. doi: 10.1021/nl303787a. Epub 2012 Nov 9. Nano Lett. 2012. PMID: 23130946

7

Polarity-driven 3-fold symmetry of GaAs/AlGaAs core multishell nanowires.

Zheng C, Wong-Leung J, Gao Q, Tan HH, Jagadish C, Etheridge J. Zheng C, et al. Nano Lett. 2013 Aug 14;13(8):3742-8. doi: 10.1021/nl401680k. Epub 2013 Jul 2. Nano Lett. 2013. PMID: 23802750

8

Twinning superlattice formation in GaAs nanowires.

Burgess T, Breuer S, Caroff P, Wong-Leung J, Gao Q, Hoe Tan H, Jagadish C. Burgess T, et al. ACS Nano. 2013 Sep 24;7(9):8105-14. doi: 10.1021/nn403390t. Epub 2013 Sep 5. ACS Nano. 2013. PMID: 23987994

9

Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization.

Jiang N, Gao Q, Parkinson P, Wong-Leung J, Mokkapati S, Breuer S, Tan HH, Zheng CL, Etheridge J, Jagadish C. Jiang N, et al. Nano Lett. 2013 Nov 13;13(11):5135-40. doi: 10.1021/nl4023385. Epub 2013 Oct 18. Nano Lett. 2013. PMID: 24127827

10

High vertical yield InP nanowire growth on Si(111) using a thin buffer layer.

Fonseka HA, Tan HH, Wong-Leung J, Kang JH, Parkinson P, Jagadish C. Fonseka HA, et al. Nanotechnology. 2013 Nov 22;24(46):465602. doi: 10.1088/0957-4484/24/46/465602. Epub 2013 Oct 24. Nanotechnology. 2013. PMID: 24157550

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