Ni HQ - Search Results

1

In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots.

Li MF, Yu Y, He JF, Wang LJ, Zhu Y, Shang XJ, Ni HQ, Niu ZC. Li MF, et al. Among authors: ni hq. Nanoscale Res Lett. 2013 Feb 18;8(1):86. doi: 10.1186/1556-276X-8-86. Nanoscale Res Lett. 2013. PMID: 23414094 Free PMC article.

2

Desorption and ripening of low density InAs quantum dots.

Zhan F, Huang SS, Niu ZC, Ni HQ, Xiong YH, Fang ZD, Zhou HY, Luo Y. Zhan F, et al. Among authors: ni hq. J Nanosci Nanotechnol. 2009 Feb;9(2):844-7. doi: 10.1166/jnn.2009.c037. J Nanosci Nanotechnol. 2009. PMID: 19441405

3

Long-wavelength emission InAs quantum dots grown on InGaAs metamorphic buffers.

Wu BP, Wu DH, Xiong YH, Huang SS, Ni HQ, Xu YQ, Niu ZC. Wu BP, et al. Among authors: ni hq. J Nanosci Nanotechnol. 2009 Feb;9(2):1333-6. doi: 10.1166/jnn.2009.c150. J Nanosci Nanotechnol. 2009. PMID: 19441518

4

Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well.

Han L, Zhu Y, Zhang X, Tan P, Ni H, Niu Z. Han L, et al. Nanoscale Res Lett. 2011 Jan 12;6(1):84. doi: 10.1186/1556-276X-6-84. Nanoscale Res Lett. 2011. PMID: 21711611 Free PMC article.

5

Photoluminescence study of low density InAs quantum clusters grown by molecular beam epitaxy.

Yu Y, Li MF, He JF, Zhu Y, Wang LJ, Ni HQ, He ZH, Niu ZC. Yu Y, et al. Among authors: ni hq. Nanotechnology. 2012 Feb 17;23(6):065706. doi: 10.1088/0957-4484/23/6/065706. Epub 2012 Jan 17. Nanotechnology. 2012. PMID: 22248719

6

Field-field and photon-photon correlations of light scattered by two remote two-level InAs quantum dots on the same substrate.

Konthasinghe K, Peiris M, Yu Y, Li MF, He JF, Wang LJ, Ni HQ, Niu ZC, Shih CK, Muller A. Konthasinghe K, et al. Among authors: ni hq. Phys Rev Lett. 2012 Dec 28;109(26):267402. doi: 10.1103/PhysRevLett.109.267402. Epub 2012 Dec 28. Phys Rev Lett. 2012. PMID: 23368617

7

Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire.

Yu Y, Li MF, He JF, He YM, Wei YJ, He Y, Zha GW, Shang XJ, Wang J, Wang LJ, Wang GW, Ni HQ, Lu CY, Niu ZC. Yu Y, et al. Among authors: ni hq. Nano Lett. 2013 Apr 10;13(4):1399-404. doi: 10.1021/nl304157d. Epub 2013 Mar 8. Nano Lett. 2013. PMID: 23464836

8

GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications.

Li J, Guo H, Liu J, Tang J, Ni H, Shi Y, Xue C, Niu Z, Zhang W, Li M, Yu Y. Li J, et al. Nanoscale Res Lett. 2013 May 8;8(1):218. doi: 10.1186/1556-276X-8-218. Nanoscale Res Lett. 2013. PMID: 23651496 Free PMC article.

9

Single-photon property characterization of 1.3 μm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes.

Zhou PY, Dou XM, Wu XF, Ding K, Li MF, Ni HQ, Niu ZC, Jiang DS, Sun BQ. Zhou PY, et al. Among authors: ni hq. Sci Rep. 2014 Jan 10;4:3633. doi: 10.1038/srep03633. Sci Rep. 2014. PMID: 24407193 Free PMC article.

10

Self-assembly of single "square" quantum rings in gold-free GaAs nanowires.

Zha G, Shang X, Su D, Yu Y, Wei B, Wang L, Li M, Wang L, Xu J, Ni H, Ji Y, Sun B, Niu Z. Zha G, et al. Nanoscale. 2014 Mar 21;6(6):3190-6. doi: 10.1039/c3nr05634a. Epub 2014 Feb 5. Nanoscale. 2014. PMID: 24500118

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