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Surface passivation and interface properties of bulk GaAs and epitaxial-GaAs/Ge using atomic layer deposited TiAlO alloy dielectric.
ACS Appl Mater Interfaces. 2013 Feb;5(3):949-57. doi: 10.1021/am302537b. Epub 2013 Jan 31.
ACS Appl Mater Interfaces. 2013.
PMID: 23331503
Interface properties of atomic layer deposited TiO2/Al2O3 films on In(0.53)Ga(0.47)As/InP substrates.
Mukherjee C, Das T, Mahata C, Maiti CK, Chia CK, Chiam SY, Chi DZ, Dalapati GK.
Mukherjee C, et al. Among authors: maiti ck.
ACS Appl Mater Interfaces. 2014 Mar 12;6(5):3263-74. doi: 10.1021/am405019d. Epub 2014 Feb 24.
ACS Appl Mater Interfaces. 2014.
PMID: 24472090
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Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping.
Dalapati GK, Shun Wong TK, Li Y, Chia CK, Das A, Mahata C, Gao H, Chattopadhyay S, Kumar MK, Seng HL, Maiti CK, Chi DZ.
Dalapati GK, et al. Among authors: maiti ck.
Nanoscale Res Lett. 2012 Feb 2;7(1):99. doi: 10.1186/1556-276X-7-99.
Nanoscale Res Lett. 2012.
PMID: 22297193
Free PMC article.
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First Report of Alternaria dianthicola Causing Leaf Blight on Withania somnifera from India.
Maiti CK, Sen S, Paul AK, Acharya K.
Maiti CK, et al.
Plant Dis. 2007 Apr;91(4):467. doi: 10.1094/PDIS-91-4-0467B.
Plant Dis. 2007.
PMID: 30781215
Free article.
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