Hwang CS - Search Results

1

Strain evolution of each type of grains in poly-crystalline (Ba,Sr)TiO(3) thin films grown by sputtering.

Park WY, Park MH, Lee JH, Yoon JH, Han JH, Choi JH, Hwang CS. Park WY, et al. Among authors: hwang cs. Sci Rep. 2012;2:939. doi: 10.1038/srep00939. Epub 2012 Dec 7. Sci Rep. 2012. PMID: 23230505 Free PMC article.

2

A Pt/TiO(2)/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays.

Park WY, Kim GH, Seok JY, Kim KM, Song SJ, Lee MH, Hwang CS. Park WY, et al. Among authors: hwang cs. Nanotechnology. 2010 May 14;21(19):195201. doi: 10.1088/0957-4484/21/19/195201. Epub 2010 Apr 19. Nanotechnology. 2010. PMID: 20400821

3

A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory.

Kim GH, Kim KM, Seok JY, Lee HJ, Cho DY, Han JH, Hwang CS. Kim GH, et al. Among authors: hwang cs. Nanotechnology. 2010 Sep 24;21(38):385202. doi: 10.1088/0957-4484/21/38/385202. Epub 2010 Aug 26. Nanotechnology. 2010. PMID: 20739739

4

SiO2 doped Ge2Sb2Te5 thin films with high thermal efficiency for applications in phase change random access memory.

Ryu SW, Lyeo HK, Lee JH, Ahn YB, Kim GH, Kim CH, Kim SG, Lee SH, Kim KY, Kim JH, Kim W, Hwang CS, Kim HJ. Ryu SW, et al. Among authors: hwang cs. Nanotechnology. 2011 Jun 24;22(25):254005. doi: 10.1088/0957-4484/22/25/254005. Epub 2011 May 16. Nanotechnology. 2011. PMID: 21572208

5

Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO₂/Pt cell.

Yoon KJ, Lee MH, Kim GH, Song SJ, Seok JY, Han S, Yoon JH, Kim KM, Hwang CS. Yoon KJ, et al. Among authors: hwang cs. Nanotechnology. 2012 May 11;23(18):185202. doi: 10.1088/0957-4484/23/18/185202. Epub 2012 Apr 20. Nanotechnology. 2012. PMID: 22516621

6

Impact of bimetal electrodes on dielectric properties of TiO2 and Al-doped TiO2 films.

Kim SK, Han S, Jeon W, Yoon JH, Han JH, Lee W, Hwang CS. Kim SK, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2012 Sep 26;4(9):4726-30. doi: 10.1021/am301094t. Epub 2012 Aug 16. ACS Appl Mater Interfaces. 2012. PMID: 22869517

7

Optimization of chemical structure of Schottky-type selection diode for crossbar resistive memory.

Kim GH, Lee JH, Jeon W, Song SJ, Seok JY, Yoon JH, Yoon KJ, Park TJ, Hwang CS. Kim GH, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2012 Oct 24;4(10):5338-45. doi: 10.1021/am301293v. Epub 2012 Oct 3. ACS Appl Mater Interfaces. 2012. PMID: 22999222

8

Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots.

Yoon JH, Han JH, Jung JS, Jeon W, Kim GH, Song SJ, Seok JY, Yoon KJ, Lee MH, Hwang CS. Yoon JH, et al. Among authors: hwang cs. Adv Mater. 2013 Apr 11;25(14):1987-92. doi: 10.1002/adma.201204572. Epub 2013 Feb 6. Adv Mater. 2013. PMID: 23386379

9

Ionic bipolar resistive switching modes determined by the preceding unipolar resistive switching reset behavior in Pt/TiO2/Pt.

Yoon KJ, Song SJ, Seok JY, Yoon JH, Kim GH, Lee JH, Hwang CS. Yoon KJ, et al. Among authors: hwang cs. Nanotechnology. 2013 Apr 12;24(14):145201. doi: 10.1088/0957-4484/24/14/145201. Epub 2013 Mar 18. Nanotechnology. 2013. PMID: 23507958

10

Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM.

Song SJ, Seok JY, Yoon JH, Kim KM, Kim GH, Lee MH, Hwang CS. Song SJ, et al. Among authors: hwang cs. Sci Rep. 2013 Dec 6;3:3443. doi: 10.1038/srep03443. Sci Rep. 2013. PMID: 24309421 Free PMC article.

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