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Hydrogen: a relevant shallow donor in zinc oxide.
Hofmann DM, Hofstaetter A, Leiter F, Zhou H, Henecker F, Meyer BK, Orlinskii SB, Schmidt J, Baranov PG. Hofmann DM, et al. Phys Rev Lett. 2002 Jan 28;88(4):045504. doi: 10.1103/PhysRevLett.88.045504. Epub 2002 Jan 10. Phys Rev Lett. 2002. PMID: 11801137
Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1-xN.
Zscherp MF, Jentsch SA, Müller MJ, Lider V, Becker C, Chen L, Littmann M, Meier F, Beyer A, Hofmann DM, As DJ, Klar PJ, Volz K, Chatterjee S, Schörmann J. Zscherp MF, et al. Among authors: hofmann dm. ACS Appl Mater Interfaces. 2023 Aug 23;15(33):39513-39522. doi: 10.1021/acsami.3c06319. Epub 2023 Aug 2. ACS Appl Mater Interfaces. 2023. PMID: 37530411
21 results