Aono M - Search Results

1

Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces.

Valov I, Sapezanskaia I, Nayak A, Tsuruoka T, Bredow T, Hasegawa T, Staikov G, Aono M, Waser R. Valov I, et al. Among authors: aono m. Nat Mater. 2012 Apr 29;11(6):530-5. doi: 10.1038/nmat3307. Nat Mater. 2012. PMID: 22543299

2

Nanoarchitectonics for Controlling the Number of Dopant Atoms in Solid Electrolyte Nanodots.

Nayak A, Unayama S, Tai S, Tsuruoka T, Waser R, Aono M, Valov I, Hasegawa T. Nayak A, et al. Among authors: aono m. Adv Mater. 2018 Feb;30(6). doi: 10.1002/adma.201703261. Epub 2018 Jan 3. Adv Mater. 2018. PMID: 29314325

3

Nanoionics-based resistive switching memories.

Waser R, Aono M. Waser R, et al. Among authors: aono m. Nat Mater. 2007 Nov;6(11):833-40. doi: 10.1038/nmat2023. Nat Mater. 2007. PMID: 17972938

4

Short-term plasticity and long-term potentiation mimicked in single inorganic synapses.

Ohno T, Hasegawa T, Tsuruoka T, Terabe K, Gimzewski JK, Aono M. Ohno T, et al. Among authors: aono m. Nat Mater. 2011 Jun 26;10(8):591-5. doi: 10.1038/nmat3054. Nat Mater. 2011. PMID: 21706012

5

Atomic switches: atomic-movement-controlled nanodevices for new types of computing.

Hino T, Hasegawa T, Terabe K, Tsuruoka T, Nayak A, Ohno T, Aono M. Hino T, et al. Among authors: aono m. Sci Technol Adv Mater. 2011 Jan 12;12(1):013003. doi: 10.1088/1468-6996/12/1/11660945. eCollection 2011 Feb. Sci Technol Adv Mater. 2011. PMID: 27877376 Free PMC article. Review.

6

Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.

Hasegawa T, Terabe K, Tsuruoka T, Aono M. Hasegawa T, et al. Among authors: aono m. Adv Mater. 2012 Jan 10;24(2):252-67. doi: 10.1002/adma.201102597. Epub 2011 Sep 29. Adv Mater. 2012. PMID: 21989741 Review.

7

Ultra-low voltage and ultra-low power consumption nonvolatile operation of a three-terminal atomic switch.

Wang Q, Itoh Y, Tsuruoka T, Aono M, Hasegawa T. Wang Q, et al. Among authors: aono m. Adv Mater. 2015 Oct 21;27(39):6029-33. doi: 10.1002/adma.201502678. Epub 2015 Aug 28. Adv Mater. 2015. PMID: 26314544

8

Kinetic factors determining conducting filament formation in solid polymer electrolyte based planar devices.

Krishnan K, Aono M, Tsuruoka T. Krishnan K, et al. Among authors: aono m. Nanoscale. 2016 Aug 7;8(29):13976-84. doi: 10.1039/c6nr00569a. Epub 2016 Apr 25. Nanoscale. 2016. PMID: 27109426

9

Switching kinetics of a Cu2S-based gap-type atomic switch.

Nayak A, Tsuruoka T, Terabe K, Hasegawa T, Aono M. Nayak A, et al. Among authors: aono m. Nanotechnology. 2011 Jun 10;22(23):235201. doi: 10.1088/0957-4484/22/23/235201. Epub 2011 Apr 11. Nanotechnology. 2011. PMID: 21483044

10

Generic relevance of counter charges for cation-based nanoscale resistive switching memories.

Tappertzhofen S, Valov I, Tsuruoka T, Hasegawa T, Waser R, Aono M. Tappertzhofen S, et al. Among authors: aono m. ACS Nano. 2013 Jul 23;7(7):6396-402. doi: 10.1021/nn4026614. Epub 2013 Jun 24. ACS Nano. 2013. PMID: 23786236

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