Cooper D - Search Results

1

Field mapping with nanometer-scale resolution for the next generation of electronic devices.

Cooper D, de la Peña F, Béché A, Rouvière JL, Servanton G, Pantel R, Morin P. Cooper D, et al. Nano Lett. 2011 Nov 9;11(11):4585-90. doi: 10.1021/nl201813w. Epub 2011 Oct 13. Nano Lett. 2011. PMID: 21972919

2

Reduction of electrical damage in specimens prepared using focused ion beam milling for dopant profiling using off-axis electron holography.

Cooper D, Truche R, Rouviere JL. Cooper D, et al. Ultramicroscopy. 2008 Apr;108(5):488-93. doi: 10.1016/j.ultramic.2007.08.006. Epub 2007 Aug 12. Ultramicroscopy. 2008. PMID: 17888576

3

Mapping active dopants in single silicon nanowires using off-axis electron holography.

den Hertog MI, Schmid H, Cooper D, Rouviere JL, Björk MT, Riel H, Rivallin P, Karg S, Riess W. den Hertog MI, et al. Among authors: cooper d. Nano Lett. 2009 Nov;9(11):3837-43. doi: 10.1021/nl902024h. Nano Lett. 2009. PMID: 19780569

4

Dark field electron holography for strain measurement.

Béché A, Rouvière JL, Barnes JP, Cooper D. Béché A, et al. Among authors: cooper d. Ultramicroscopy. 2011 Feb;111(3):227-38. doi: 10.1016/j.ultramic.2010.11.030. Epub 2010 Nov 30. Ultramicroscopy. 2011. PMID: 21333860

5

Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron holography.

Béché A, Rouvière JL, Barnes JP, Cooper D. Béché A, et al. Among authors: cooper d. Ultramicroscopy. 2013 Aug;131:10-23. doi: 10.1016/j.ultramic.2013.03.014. Epub 2013 Apr 6. Ultramicroscopy. 2013. PMID: 23673283

6

Practical aspects of strain measurement in thin SiGe layers by (004) dark-field electron holography in Lorentz mode.

Denneulin T, Cooper D, Rouviere JL. Denneulin T, et al. Among authors: cooper d. Micron. 2014 Jul;62:52-65. doi: 10.1016/j.micron.2014.02.017. Epub 2014 Mar 15. Micron. 2014. PMID: 24811992

7

Combining 2 nm Spatial Resolution and 0.02% Precision for Deformation Mapping of Semiconductor Specimens in a Transmission Electron Microscope by Precession Electron Diffraction.

Cooper D, Bernier N, Rouvière JL. Cooper D, et al. Nano Lett. 2015 Aug 12;15(8):5289-94. doi: 10.1021/acs.nanolett.5b01614. Epub 2015 Jul 30. Nano Lett. 2015. PMID: 26218789

8

Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope.

Cooper D, Denneulin T, Bernier N, Béché A, Rouvière JL. Cooper D, et al. Micron. 2016 Jan;80:145-65. doi: 10.1016/j.micron.2015.09.001. Epub 2015 Sep 15. Micron. 2016. PMID: 26606463 Free article.

9

High-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffraction.

Cooper D, Bernier N, Rouvière JL, Wang YY, Weng W, Madan A, Mochizuki S, Jagannathan H. Cooper D, et al. Appl Phys Lett. 2017 May 29;110(22):223109. doi: 10.1063/1.4983124. Epub 2017 Jun 1. Appl Phys Lett. 2017. PMID: 28652641 Free PMC article.

10

Direct comparison of off-axis holography and differential phase contrast for the mapping of electric fields in semiconductors by transmission electron microscopy.

Haas B, Rouvière JL, Boureau V, Berthier R, Cooper D. Haas B, et al. Among authors: cooper d. Ultramicroscopy. 2019 Mar;198:58-72. doi: 10.1016/j.ultramic.2018.12.003. Epub 2018 Dec 24. Ultramicroscopy. 2019. PMID: 30660032

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