Hwang CS - Search Results

1

Effect of catalyst layer density and growth temperature in rapid atomic layer deposition of silica using tris(tert-pentoxy)silanol.

Won SJ, Kim JR, Suh S, Lee NI, Hwang CS, Kim HJ. Won SJ, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2011 May;3(5):1633-9. doi: 10.1021/am200176j. Epub 2011 May 3. ACS Appl Mater Interfaces. 2011. PMID: 21517074

2

SiO2 doped Ge2Sb2Te5 thin films with high thermal efficiency for applications in phase change random access memory.

Ryu SW, Lyeo HK, Lee JH, Ahn YB, Kim GH, Kim CH, Kim SG, Lee SH, Kim KY, Kim JH, Kim W, Hwang CS, Kim HJ. Ryu SW, et al. Among authors: hwang cs. Nanotechnology. 2011 Jun 24;22(25):254005. doi: 10.1088/0957-4484/22/25/254005. Epub 2011 May 16. Nanotechnology. 2011. PMID: 21572208

3

Impact of bimetal electrodes on dielectric properties of TiO2 and Al-doped TiO2 films.

Kim SK, Han S, Jeon W, Yoon JH, Han JH, Lee W, Hwang CS. Kim SK, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2012 Sep 26;4(9):4726-30. doi: 10.1021/am301094t. Epub 2012 Aug 16. ACS Appl Mater Interfaces. 2012. PMID: 22869517

4

Optimization of chemical structure of Schottky-type selection diode for crossbar resistive memory.

Kim GH, Lee JH, Jeon W, Song SJ, Seok JY, Yoon JH, Yoon KJ, Park TJ, Hwang CS. Kim GH, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2012 Oct 24;4(10):5338-45. doi: 10.1021/am301293v. Epub 2012 Oct 3. ACS Appl Mater Interfaces. 2012. PMID: 22999222

5

Interfacial dead-layer effects in Hf-silicate films with Pt or RuO2 gates.

Kim HK, Yu IH, Lee JH, Hwang CS. Kim HK, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2013 Jul 24;5(14):6769-72. doi: 10.1021/am401842h. Epub 2013 Jul 10. ACS Appl Mater Interfaces. 2013. PMID: 23806203

6

Controlling the Al-doping profile and accompanying electrical properties of rutile-phased TiO2 thin films.

Jeon W, Rha SH, Lee W, Yoo YW, An CH, Jung KH, Kim SK, Hwang CS. Jeon W, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2014 May 28;6(10):7910-7. doi: 10.1021/am501247u. Epub 2014 May 1. ACS Appl Mater Interfaces. 2014. PMID: 24749990

7

Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers.

Choi YJ, Lim H, Lee S, Suh S, Kim JR, Jung HS, Park S, Lee JH, Kim SG, Hwang CS, Kim H. Choi YJ, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2014 May 28;6(10):7885-94. doi: 10.1021/am5012172. Epub 2014 Apr 29. ACS Appl Mater Interfaces. 2014. PMID: 24780393

8

Impact of the cation composition on the electrical performance of solution-processed zinc tin oxide thin-film transistors.

Kim YJ, Oh S, Yang BS, Han SJ, Lee HW, Kim HJ, Jeong JK, Hwang CS, Kim HJ. Kim YJ, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2014 Aug 27;6(16):14026-36. doi: 10.1021/am503351e. Epub 2014 Aug 12. ACS Appl Mater Interfaces. 2014. PMID: 25090286

9

Evaluating the top electrode material for achieving an equivalent oxide thickness smaller than 0.4 nm from an Al-doped TiO₂ film.

Jeon W, Yoo S, Kim HK, Lee W, An CH, Chung MJ, Cho CJ, Kim SK, Hwang CS. Jeon W, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2014 Dec 10;6(23):21632-7. doi: 10.1021/am506677e. Epub 2014 Nov 25. ACS Appl Mater Interfaces. 2014. PMID: 25402821

10

Structure and electrical properties of Al-doped HfO₂ and ZrO₂ films grown via atomic layer deposition on Mo electrodes.

Yoo YW, Jeon W, Lee W, An CH, Kim SK, Hwang CS. Yoo YW, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2014 Dec 24;6(24):22474-82. doi: 10.1021/am506525s. Epub 2014 Dec 4. ACS Appl Mater Interfaces. 2014. PMID: 25423483

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