Wang WH - Search Results

1

High-quality graphene p-n junctions via resist-free fabrication and solution-based noncovalent functionalization.

Cheng HC, Shiue RJ, Tsai CC, Wang WH, Chen YT. Cheng HC, et al. Among authors: wang wh. ACS Nano. 2011 Mar 22;5(3):2051-9. doi: 10.1021/nn103221v. Epub 2011 Feb 15. ACS Nano. 2011. PMID: 21322639

2

Transport/magnetotransport of high-performance graphene transistors on organic molecule-functionalized substrates.

Chen SY, Ho PH, Shiue RJ, Chen CW, Wang WH. Chen SY, et al. Among authors: wang wh. Nano Lett. 2012 Feb 8;12(2):964-9. doi: 10.1021/nl204036d. Epub 2012 Jan 20. Nano Lett. 2012. PMID: 22224857

3

Self-encapsulated doping of n-type graphene transistors with extended air stability.

Ho PH, Yeh YC, Wang DY, Li SS, Chen HA, Chung YH, Lin CC, Wang WH, Chen CW. Ho PH, et al. Among authors: wang wh, wang dy. ACS Nano. 2012 Jul 24;6(7):6215-21. doi: 10.1021/nn301639j. Epub 2012 Jun 8. ACS Nano. 2012. PMID: 22681443

4

Layer-dependent morphologies of silver on n-layer graphene.

Huang CW, Lin HY, Huang CH, Shiue RJ, Wang WH, Liu CY, Chui HC. Huang CW, et al. Among authors: wang wh. Nanoscale Res Lett. 2012 Nov 9;7(1):618. doi: 10.1186/1556-276X-7-618. Nanoscale Res Lett. 2012. PMID: 23140587 Free PMC article.

5

Revealing anisotropic strain in exfoliated graphene by polarized Raman spectroscopy.

Huang CW, Shiue RJ, Chui HC, Wang WH, Wang JK, Tzeng Y, Liu CY. Huang CW, et al. Among authors: wang wh, wang jk. Nanoscale. 2013 Oct 21;5(20):9626-32. doi: 10.1039/c3nr00123g. Nanoscale. 2013. PMID: 23852110

6

High-Mobility InSe Transistors: The Role of Surface Oxides.

Ho PH, Chang YR, Chu YC, Li MK, Tsai CA, Wang WH, Ho CH, Chen CW, Chiu PW. Ho PH, et al. Among authors: wang wh. ACS Nano. 2017 Jul 25;11(7):7362-7370. doi: 10.1021/acsnano.7b03531. Epub 2017 Jul 5. ACS Nano. 2017. PMID: 28661128

7

Highly Sensitive, Visible Blind, Wearable, and Omnidirectional Near-Infrared Photodetectors.

Kataria M, Yadav K, Cai SY, Liao YM, Lin HI, Shen TL, Chen YH, Chen YT, Wang WH, Chen YF. Kataria M, et al. Among authors: wang wh. ACS Nano. 2018 Sep 25;12(9):9596-9607. doi: 10.1021/acsnano.8b05582. Epub 2018 Sep 14. ACS Nano. 2018. PMID: 30199626

8

Interfacial Elemental Analysis of Slanted Edge-Contacted Monolayer MoS₂ Transistors via Directionally Angled Etching.

Lin CC, Paylaga NT, Yen CC, Lin YH, Wang KH, Watanabe K, Taniguchi T, Liang CT, Chen SY, Wang WH. Lin CC, et al. Among authors: wang wh. ACS Nano. 2025 Jan 21. doi: 10.1021/acsnano.4c13581. Online ahead of print. ACS Nano. 2025. PMID: 39835414

9

Spatially and Precisely Controlled Large-Scale and Persistent Optical Gating in a TiO _x-MoS₂ Heterostructure.

Ho PH, Shih YS, Li MK, Chen TP, Shih FY, Wang WH, Chen CW. Ho PH, et al. Among authors: wang wh. ACS Appl Mater Interfaces. 2018 Nov 7;10(44):38319-38325. doi: 10.1021/acsami.8b11374. Epub 2018 Oct 29. ACS Appl Mater Interfaces. 2018. PMID: 30360078

10

Phase Modulation of Self-Gating in Ionic Liquid-Functionalized InSe Field-Effect Transistors.

Cheng CY, Pai WL, Chen YH, Paylaga NT, Wu PY, Chen CW, Liang CT, Chou FC, Sankar R, Fuhrer MS, Chen SY, Wang WH. Cheng CY, et al. Among authors: wang wh. Nano Lett. 2022 Mar 23;22(6):2270-2276. doi: 10.1021/acs.nanolett.1c04522. Epub 2022 Feb 28. Nano Lett. 2022. PMID: 35225620

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