De Franceschi S - Search Results

1

Quantum transport in GaN/AlN double-barrier heterostructure nanowires.

Songmuang R, Katsaros G, Monroy E, Spathis P, Bougerol C, Mongillo M, De Franceschi S. Songmuang R, et al. Among authors: de franceschi s. Nano Lett. 2010 Sep 8;10(9):3545-50. doi: 10.1021/nl1017578. Nano Lett. 2010. PMID: 20731363

2

Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon.

Katsaros G, Spathis P, Stoffel M, Fournel F, Mongillo M, Bouchiat V, Lefloch F, Rastelli A, Schmidt OG, De Franceschi S. Katsaros G, et al. Among authors: de franceschi s. Nat Nanotechnol. 2010 Jun;5(6):458-64. doi: 10.1038/nnano.2010.84. Epub 2010 May 2. Nat Nanotechnol. 2010. PMID: 20436467

3

Joule-assisted silicidation for short-channel silicon nanowire devices.

Mongillo M, Spathis P, Katsaros G, Gentile P, Sanquer M, De Franceschi S. Mongillo M, et al. Among authors: de franceschi s. ACS Nano. 2011 Sep 27;5(9):7117-23. doi: 10.1021/nn202524j. Epub 2011 Aug 17. ACS Nano. 2011. PMID: 21815658

4

Observation of spin-selective tunneling in SiGe nanocrystals.

Katsaros G, Golovach VN, Spathis P, Ares N, Stoffel M, Fournel F, Schmidt OG, Glazman LI, De Franceschi S. Katsaros G, et al. Among authors: de franceschi s. Phys Rev Lett. 2011 Dec 9;107(24):246601. doi: 10.1103/PhysRevLett.107.246601. Epub 2011 Dec 7. Phys Rev Lett. 2011. PMID: 22243017

5

Multifunctional devices and logic gates with undoped silicon nanowires.

Mongillo M, Spathis P, Katsaros G, Gentile P, De Franceschi S. Mongillo M, et al. Among authors: de franceschi s. Nano Lett. 2012 Jun 13;12(6):3074-9. doi: 10.1021/nl300930m. Epub 2012 May 29. Nano Lett. 2012. PMID: 22594644

6

Monolithic growth of ultrathin Ge nanowires on Si(001).

Zhang JJ, Katsaros G, Montalenti F, Scopece D, Rezaev RO, Mickel C, Rellinghaus B, Miglio L, De Franceschi S, Rastelli A, Schmidt OG. Zhang JJ, et al. Among authors: de franceschi s. Phys Rev Lett. 2012 Aug 24;109(8):085502. doi: 10.1103/PhysRevLett.109.085502. Epub 2012 Aug 23. Phys Rev Lett. 2012. PMID: 23002758

7

Zero-bias anomaly in a nanowire quantum dot coupled to superconductors.

Lee EJ, Jiang X, Aguado R, Katsaros G, Lieber CM, De Franceschi S. Lee EJ, et al. Among authors: de franceschi s. Phys Rev Lett. 2012 Nov 2;109(18):186802. doi: 10.1103/PhysRevLett.109.186802. Epub 2012 Oct 31. Phys Rev Lett. 2012. PMID: 23215310

8

Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor.

Voisin B, Nguyen VH, Renard J, Jehl X, Barraud S, Triozon F, Vinet M, Duchemin I, Niquet YM, de Franceschi S, Sanquer M. Voisin B, et al. Among authors: de franceschi s. Nano Lett. 2014;14(4):2094-8. doi: 10.1021/nl500299h. Epub 2014 Mar 14. Nano Lett. 2014. PMID: 24611581

9

Nature of tunable hole g factors in quantum dots.

Ares N, Golovach VN, Katsaros G, Stoffel M, Fournel F, Glazman LI, Schmidt OG, De Franceschi S. Ares N, et al. Among authors: de franceschi s. Phys Rev Lett. 2013 Jan 25;110(4):046602. doi: 10.1103/PhysRevLett.110.046602. Epub 2013 Jan 23. Phys Rev Lett. 2013. PMID: 25166183

10

Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry.

Crippa A, Maurand R, Kotekar-Patil D, Corna A, Bohuslavskyi H, Orlov AO, Fay P, Laviéville R, Barraud S, Vinet M, Sanquer M, De Franceschi S, Jehl X. Crippa A, et al. Among authors: de franceschi s. Nano Lett. 2017 Feb 8;17(2):1001-1006. doi: 10.1021/acs.nanolett.6b04354. Epub 2017 Jan 12. Nano Lett. 2017. PMID: 28080065

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