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Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO.
Yi JB, Lim CC, Xing GZ, Fan HM, Van LH, Huang SL, Yang KS, Huang XL, Qin XB, Wang BY, Wu T, Wang L, Zhang HT, Gao XY, Liu T, Wee AT, Feng YP, Ding J. Yi JB, et al. Among authors: huang xl, huang sl. Phys Rev Lett. 2010 Apr 2;104(13):137201. doi: 10.1103/PhysRevLett.104.137201. Epub 2010 Mar 29. Phys Rev Lett. 2010. PMID: 20481907
745 results