Pei T - Search Results

1

Y-contacted high-performance n-type single-walled carbon nanotube field-effect transistors: scaling and comparison with Sc-contacted devices.

Ding L, Wang S, Zhang Z, Zeng Q, Wang Z, Pei T, Yang L, Liang X, Shen J, Chen Q, Cui R, Li Y, Peng LM. Ding L, et al. Among authors: pei t. Nano Lett. 2009 Dec;9(12):4209-14. doi: 10.1021/nl9024243. Nano Lett. 2009. PMID: 19995085

2

Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage.

Zhang Z, Wang S, Ding L, Liang X, Pei T, Shen J, Xu H, Chen Q, Cui R, Li Y, Peng LM. Zhang Z, et al. Among authors: pei t. Nano Lett. 2008 Nov;8(11):3696-701. doi: 10.1021/nl8018802. Epub 2008 Oct 24. Nano Lett. 2008. PMID: 18947214

3

Almost perfectly symmetric SWCNT-based CMOS devices and scaling.

Zhang Z, Wang S, Wang Z, Ding L, Pei T, Hu Z, Liang X, Chen Q, Li Y, Peng LM. Zhang Z, et al. Among authors: pei t. ACS Nano. 2009 Nov 24;3(11):3781-7. doi: 10.1021/nn901079p. ACS Nano. 2009. PMID: 19845337

4

Growth and performance of yttrium oxide as an ideal high-kappa gate dielectric for carbon-based electronics.

Wang Z, Xu H, Zhang Z, Wang S, Ding L, Zeng Q, Yang L, Pei T, Liang X, Gao M, Peng LM. Wang Z, et al. Among authors: pei t. Nano Lett. 2010 Jun 9;10(6):2024-30. doi: 10.1021/nl100022u. Nano Lett. 2010. PMID: 20455575

5

Large signal operation of small band-gap carbon nanotube-based ambipolar transistor: a high-performance frequency doubler.

Wang Z, Ding L, Pei T, Zhang Z, Wang S, Yu T, Ye X, Peng F, Li Y, Peng LM. Wang Z, et al. Among authors: pei t. Nano Lett. 2010 Sep 8;10(9):3648-55. doi: 10.1021/nl102111j. Nano Lett. 2010. PMID: 20677775

6

High-performance carbon nanotube light-emitting diodes with asymmetric contacts.

Wang S, Zeng Q, Yang L, Zhang Z, Wang Z, Pei T, Ding L, Liang X, Gao M, Li Y, Peng LM. Wang S, et al. Among authors: pei t. Nano Lett. 2011 Jan 12;11(1):23-9. doi: 10.1021/nl101513z. Epub 2010 Nov 30. Nano Lett. 2011. PMID: 21117697

7

Self-aligned U-gate carbon nanotube field-effect transistor with extremely small parasitic capacitance and drain-induced barrier lowering.

Ding L, Wang Z, Pei T, Zhang Z, Wang S, Xu H, Peng F, Li Y, Peng LM. Ding L, et al. Among authors: pei t. ACS Nano. 2011 Apr 26;5(4):2512-9. doi: 10.1021/nn102091h. Epub 2011 Mar 11. ACS Nano. 2011. PMID: 21370813

8

CMOS-based carbon nanotube pass-transistor logic integrated circuits.

Ding L, Zhang Z, Liang S, Pei T, Wang S, Li Y, Zhou W, Liu J, Peng LM. Ding L, et al. Among authors: pei t. Nat Commun. 2012 Feb 14;3:677. doi: 10.1038/ncomms1682. Nat Commun. 2012. PMID: 22334080 Free PMC article.

9

Carbon nanotube field-effect transistors for use as pass transistors in integrated logic gates and full subtractor circuits.

Ding L, Zhang Z, Pei T, Liang S, Wang S, Zhou W, Liu J, Peng LM. Ding L, et al. Among authors: pei t. ACS Nano. 2012 May 22;6(5):4013-9. doi: 10.1021/nn300320j. Epub 2012 Apr 13. ACS Nano. 2012. PMID: 22482426

10

Modularized construction of general integrated circuits on individual carbon nanotubes.

Pei T, Zhang P, Zhang Z, Qiu C, Liang S, Yang Y, Wang S, Peng LM. Pei T, et al. Nano Lett. 2014 Jun 11;14(6):3102-9. doi: 10.1021/nl5001604. Epub 2014 May 8. Nano Lett. 2014. PMID: 24796796

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