Zeng F - Search Results

1

Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.

Yang YC, Pan F, Liu Q, Liu M, Zeng F. Yang YC, et al. Among authors: zeng f. Nano Lett. 2009 Apr;9(4):1636-43. doi: 10.1021/nl900006g. Nano Lett. 2009. PMID: 19271714

2

Bipolar resistance switching characteristics in TiN/ZnO:Mn/Pt junctions developed for nonvolatile resistive memory application.

Yang YC, Fan B, Zeng F, Pan F. Yang YC, et al. Among authors: zeng f. J Nanosci Nanotechnol. 2010 Nov;10(11):7370-3. doi: 10.1166/jnn.2010.2762. J Nanosci Nanotechnol. 2010. PMID: 21137937

3

Nonvolatile resistive switching in single crystalline ZnO nanowires.

Yang Y, Zhang X, Gao M, Zeng F, Zhou W, Xie S, Pan F. Yang Y, et al. Among authors: zeng f. Nanoscale. 2011 Apr;3(4):1917-21. doi: 10.1039/c1nr10096c. Epub 2011 Mar 11. Nanoscale. 2011. PMID: 21394361

4

Enhancement of electrical and ferromagnetic properties by additional Al doping in Co:ZnO thin films.

Liu XJ, Song C, Zeng F, Pan F. Liu XJ, et al. Among authors: zeng f. J Phys Condens Matter. 2007 Jul 25;19(29):296208. doi: 10.1088/0953-8984/19/29/296208. Epub 2007 Jul 5. J Phys Condens Matter. 2007. PMID: 21483079

5

Evidence of structural defect enhanced room-temperature ferromagnetism in Co-doped ZnO.

Song C, Pan SN, Liu XJ, Li XW, Zeng F, Yan WS, He B, Pan F. Song C, et al. Among authors: zeng f. J Phys Condens Matter. 2007 Apr 30;19(17):176229. doi: 10.1088/0953-8984/19/17/176229. Epub 2007 Apr 16. J Phys Condens Matter. 2007. PMID: 21690974

6

Resistive switching induced by metallic filaments formation through poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate).

Wang Z, Zeng F, Yang J, Chen C, Pan F. Wang Z, et al. Among authors: zeng f. ACS Appl Mater Interfaces. 2012 Jan;4(1):447-53. doi: 10.1021/am201518v. Epub 2011 Dec 27. ACS Appl Mater Interfaces. 2012. PMID: 22201222

7

Resistive switching and magnetic modulation in cobalt-doped ZnO.

Chen G, Song C, Chen C, Gao S, Zeng F, Pan F. Chen G, et al. Among authors: zeng f. Adv Mater. 2012 Jul 10;24(26):3515-20. doi: 10.1002/adma.201201595. Epub 2012 Jun 8. Adv Mater. 2012. PMID: 22678882

8

Room-temperature perpendicular exchange coupling and tunneling anisotropic magnetoresistance in an antiferromagnet-based tunnel junction.

Wang YY, Song C, Cui B, Wang GY, Zeng F, Pan F. Wang YY, et al. Among authors: zeng f. Phys Rev Lett. 2012 Sep 28;109(13):137201. doi: 10.1103/PhysRevLett.109.137201. Epub 2012 Sep 27. Phys Rev Lett. 2012. PMID: 23030116

9

Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer.

Tang G, Zeng F, Chen C, Liu H, Gao S, Song C, Lin Y, Chen G, Pan F. Tang G, et al. Among authors: zeng f. Nanoscale. 2013 Jan 7;5(1):422-8. doi: 10.1039/c2nr32743k. Epub 2012 Nov 27. Nanoscale. 2013. PMID: 23187889

10

Tuning of uniaxial magnetic anisotropy in amorphous CoFeB films.

Cui B, Song C, Wang YY, Yan WS, Zeng F, Pan F. Cui B, et al. Among authors: zeng f. J Phys Condens Matter. 2013 Mar 13;25(10):106003. doi: 10.1088/0953-8984/25/10/106003. Epub 2013 Feb 6. J Phys Condens Matter. 2013. PMID: 23389101

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