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Page 1
Electron transport via local polarons at interface atoms.
Berthe M, Urbieta A, Perdigão L, Grandidier B, Deresmes D, Delerue C, Stiévenard D, Rurali R, Lorente N, Magaud L, Ordejón P. Berthe M, et al. Among authors: delerue c. Phys Rev Lett. 2006 Nov 17;97(20):206801. doi: 10.1103/PhysRevLett.97.206801. Epub 2006 Nov 13. Phys Rev Lett. 2006. PMID: 17155701
Observation of an additional electronic level of the EL2 defect.
Stiévenard D, Delerue C, von Bardeleben HJ, Bourgoin JC, Guillot G, Brémond G, Azoulay R. Stiévenard D, et al. Among authors: delerue c. Phys Rev B Condens Matter. 1991 Jul 15;44(3):1372-1374. doi: 10.1103/physrevb.44.1372. Phys Rev B Condens Matter. 1991. PMID: 9999657 No abstract available.
Metastable state of EL2 in GaAs.
Delerue C, Lannoo M, Stiévenard D, von Bardeleben HJ, Bourgoin JC. Delerue C, et al. Phys Rev Lett. 1987 Dec 21;59(25):2875-2878. doi: 10.1103/PhysRevLett.59.2875. Phys Rev Lett. 1987. PMID: 10035676 No abstract available.
Probing the carrier capture rate of a single quantum level.
Berthe M, Stiufiuc R, Grandidier B, Deresmes D, Delerue C, Stiévenard D. Berthe M, et al. Among authors: delerue c. Science. 2008 Jan 25;319(5862):436-8. doi: 10.1126/science.1151186. Epub 2007 Dec 13. Science. 2008. PMID: 18079365
Coulomb energy determination of a single Si dangling bond.
Nguyen TH, Mahieu G, Berthe M, Grandidier B, Delerue C, Stiévenard D, Ebert P. Nguyen TH, et al. Among authors: delerue c. Phys Rev Lett. 2010 Nov 26;105(22):226404. doi: 10.1103/PhysRevLett.105.226404. Epub 2010 Nov 24. Phys Rev Lett. 2010. PMID: 21231404
Nanoscale carrier multiplication mapping in a Si diode.
Durand C, Capiod P, Berthe M, Nys JP, Krzeminski C, Stiévenard D, Delerue C, Grandidier B. Durand C, et al. Among authors: delerue c. Nano Lett. 2014 Oct 8;14(10):5636-40. doi: 10.1021/nl5022255. Epub 2014 Sep 24. Nano Lett. 2014. PMID: 25244561
96 results