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Probing semiconductor gap states with resonant tunneling.
Loth S, Wenderoth M, Winking L, Ulbrich RG, Malzer S, Döhler GH. Loth S, et al. Among authors: wenderoth m. Phys Rev Lett. 2006 Feb 17;96(6):066403. doi: 10.1103/PhysRevLett.96.066403. Epub 2006 Feb 15. Phys Rev Lett. 2006. PMID: 16606021
Origin of Schottky barriers in gold contacts on GaAs110.
Reusch TC, Wenderoth M, Winking L, Quaas N, Ulbrich RG. Reusch TC, et al. Among authors: wenderoth m. Phys Rev Lett. 2004 Nov 12;93(20):206801. doi: 10.1103/PhysRevLett.93.206801. Epub 2004 Nov 10. Phys Rev Lett. 2004. PMID: 15600951
Enhanced donor binding energy close to a semiconductor surface.
Wijnheijmer AP, Garleff JK, Teichmann K, Wenderoth M, Loth S, Ulbrich RG, Maksym PA, Roy M, Koenraad PM. Wijnheijmer AP, et al. Among authors: wenderoth m. Phys Rev Lett. 2009 Apr 24;102(16):166101. doi: 10.1103/PhysRevLett.102.166101. Epub 2009 Apr 21. Phys Rev Lett. 2009. PMID: 19518726
Mapping itinerant electrons around Kondo impurities.
Prüser H, Wenderoth M, Weismann A, Ulbrich RG. Prüser H, et al. Among authors: wenderoth m. Phys Rev Lett. 2012 Apr 20;108(16):166604. doi: 10.1103/PhysRevLett.108.166604. Epub 2012 Apr 20. Phys Rev Lett. 2012. PMID: 22680744
74 results