Deterministic grayscale nanotopography to engineer mobilities in strained MoS2 FETs.
Liu X, Erbas B, Conde-Rubio A, Rivano N, Wang Z, Jiang J, Bienz S, Kumar N, Sohier T, Penedo M, Banerjee M, Fantner G, Zenobi R, Marzari N, Kis A, Boero G, Brugger J.
Liu X, et al. Among authors: penedo m.
Nat Commun. 2024 Aug 13;15(1):6934. doi: 10.1038/s41467-024-51165-4.
Nat Commun. 2024.
PMID: 39138213
Free PMC article.