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Vacancy defects as compensating centers in Mg-doped GaN.
Hautakangas S, Oila J, Alatalo M, Saarinen K, Liszkay L, Seghier D, Gislason HP. Hautakangas S, et al. Among authors: saarinen k. Phys Rev Lett. 2003 Apr 4;90(13):137402. doi: 10.1103/PhysRevLett.90.137402. Epub 2003 Apr 3. Phys Rev Lett. 2003. PMID: 12689324
Observation of a vacancy at the DX center in Si- and Sn-doped AlGaAs.
Mäkinen J, Laine T, Saarinen K, Hautojärvi P, Corbel C, Airaksinen VM, Gibart P. Mäkinen J, et al. Among authors: saarinen k. Phys Rev Lett. 1993 Nov 8;71(19):3154-3157. doi: 10.1103/PhysRevLett.71.3154. Phys Rev Lett. 1993. PMID: 10054871 No abstract available.
181 results