Nemanich RJ - Search Results

1

Surface electronic states and stability of the H-terminated Si(100) 1 x 1 surface produced by low-temperature H-plasma exposure.

Cho J, Nemanich RJ. Cho J, et al. Among authors: nemanich rj. Phys Rev B Condens Matter. 1992 Dec 15;46(23):15212-15217. doi: 10.1103/physrevb.46.15212. Phys Rev B Condens Matter. 1992. PMID: 10003637 No abstract available.

2

Surface electronic states of low-temperature H-plasma-exposed Ge(100).

Cho J, Nemanich RJ. Cho J, et al. Among authors: nemanich rj. Phys Rev B Condens Matter. 1992 Nov 15;46(19):12421-12426. doi: 10.1103/physrevb.46.12421. Phys Rev B Condens Matter. 1992. PMID: 10003158 No abstract available.

3

Photoluminescence above the Tauc gap in a-Si:H.

Campbell IH, Fauchet PM, Lyon SA, Nemanich RJ. Campbell IH, et al. Among authors: nemanich rj. Phys Rev B Condens Matter. 1990 May 15;41(14):9871-9879. doi: 10.1103/physrevb.41.9871. Phys Rev B Condens Matter. 1990. PMID: 9993368 No abstract available.

4

Surface electronic structure of clean and hydrogen-chemisorbed SixGe1-x alloy surfaces.

Ku JH, Nemanich RJ. Ku JH, et al. Among authors: nemanich rj. Phys Rev B Condens Matter. 1996 Nov 15;54(19):14102-14110. doi: 10.1103/physrevb.54.14102. Phys Rev B Condens Matter. 1996. PMID: 9985333 No abstract available.

5

Negative-electron-affinity effects on the diamond (100) surface.

van der Weide J, Zhang Z, Baumann PK, Wensell MG, Bernholc J, Nemanich RJ. van der Weide J, et al. Among authors: nemanich rj. Phys Rev B Condens Matter. 1994 Aug 15;50(8):5803-5806. doi: 10.1103/physrevb.50.5803. Phys Rev B Condens Matter. 1994. PMID: 9976944 No abstract available.

6

Interface stability of Ti(SiGe)2 and SiGe alloys: Tie lines in the ternary equilibrium diagram.

Aldrich DB, d'Heurle FM, Sayers DE, Nemanich RJ. Aldrich DB, et al. Among authors: nemanich rj. Phys Rev B Condens Matter. 1996 Jun 15;53(24):16279-16282. doi: 10.1103/physrevb.53.16279. Phys Rev B Condens Matter. 1996. PMID: 9983463 No abstract available.

7

Ultrafast recombination and trapping in amorphous silicon.

Esser A, Seibert K, Kurz H, Parsons GN, Wang C, Davidson BN, Lucovsky G, Nemanich RJ. Esser A, et al. Among authors: nemanich rj. Phys Rev B Condens Matter. 1990 Feb 15;41(5):2879-2884. doi: 10.1103/physrevb.41.2879. Phys Rev B Condens Matter. 1990. PMID: 9994054 No abstract available.

8

Influence of interfacial hydrogen and oxygen on the Schottky barrier height of nickel on (111) and (100) diamond surfaces.

van der Weide J, Nemanich RJ. van der Weide J, et al. Among authors: nemanich rj. Phys Rev B Condens Matter. 1994 May 15;49(19):13629-13637. doi: 10.1103/physrevb.49.13629. Phys Rev B Condens Matter. 1994. PMID: 10010302 No abstract available.

9

Analysis of the composite structures in diamond thin films by Raman spectroscopy.

Shroder RE, Nemanich RJ, Glass JT. Shroder RE, et al. Among authors: nemanich rj. Phys Rev B Condens Matter. 1990 Feb 15;41(6):3738-3745. doi: 10.1103/physrevb.41.3738. Phys Rev B Condens Matter. 1990. PMID: 9994176 No abstract available.

10

Bond-length relaxation in Si1-xGex alloys.

Aldrich DB, Nemanich RJ, Sayers DE. Aldrich DB, et al. Among authors: nemanich rj. Phys Rev B Condens Matter. 1994 Nov 15;50(20):15026-15033. doi: 10.1103/physrevb.50.15026. Phys Rev B Condens Matter. 1994. PMID: 9975851 No abstract available.

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