Transition from one- to two-subband occupancy in the 2DEG of back-gated modulation-doped GaAs-AlxGa1-xAs heterostructures
Phys Rev B Condens Matter
.
1995 Jun 15;51(24):17600-17604.
doi: 10.1103/physrevb.51.17600.
Authors
AR Hamilton
,
EH Linfield
,
MJ Kelly
,
DA Ritchie
,
GA Jones
,
M Pepper
PMID:
9978786
DOI:
10.1103/physrevb.51.17600
No abstract available