Influence of interface localization on the binding energy of acceptor bound excitons in narrow GaAs/AlxGa1-xAs quantum wells
Phys Rev B Condens Matter
.
1995 May 15;51(19):13221-13225.
doi: 10.1103/physrevb.51.13221.
Authors
CI Harris
,
B Monemar
,
H Kalt
,
PO Holtz
,
M Sundaram
,
JL Merz
,
AC Gossard
PMID:
9978121
DOI:
10.1103/physrevb.51.13221
No abstract available