This paper proposes and designs a silicon-based negative capacitance field effect transistor (NCFET) to replace conventional MOSFETs as the rectifying device in RF-DC circuits, aiming to enhance the rectification efficiency under low-power density conditions. By combining theoretical analysis with device simulations, the impacts of the ferroelectric material anisotropy, ferroelectric layer thickness, and active region doping concentration on the device performance were systematically optimized. The proposed NCFET structure is tailored for microwave wireless power transmission applications. Based on the optimized NCFET, a half-wave rectifier circuit employing a novel diode connection configuration was constructed and verified through transient simulations. The results show that at a microwave frequency of 2.45 GHz, the designed NCFET rectifier achieves rectification efficiencies of 16.1% and 29.75% at input power densities of -10 dBm and -6 dBm, respectively, which are 7.15 and 2.3 times higher than those of conventional silicon-based MOS devices. Furthermore, it significantly outperforms CMOS rectifiers reported in the literature. This study demonstrates the superior rectification performance of the proposed NCFET under low-power density conditions, offering an efficient device solution for microwave wireless power transmission systems.
Keywords: 2.45 G; NCFET; rectification efficiency; sentaurus TCAD; weak energy density; wireless energy transfer.