Highly bright perovskite light-emitting diodes enabled by retarded Auger recombination

Zhiqi Li; Qi Wei; Yu Wang; Cong Tao; Yatao Zou; Xiaowang Liu; Ziwei Li; Zhongbin Wu; Mingjie Li; Wenbin Guo; Gang Li; Weidong Xu; Feng Gao

doi:10.1038/s41467-025-56001-x

Highly bright perovskite light-emitting diodes enabled by retarded Auger recombination

Nat Commun. 2025 Jan 22;16(1):927. doi: 10.1038/s41467-025-56001-x.

Authors

Zhiqi Li^#^{1

2

3}, Qi Wei^#⁴, Yu Wang¹, Cong Tao⁵, Yatao Zou⁵, Xiaowang Liu⁵, Ziwei Li⁶, Zhongbin Wu⁵, Mingjie Li⁷, Wenbin Guo⁸, Gang Li⁹, Weidong Xu^{10

11}, Feng Gao¹²

Affiliations

¹ Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, Sweden.
² Department of Electrical and Electronic Engineering, Photonic Research Institute (PRI), Research Institute of Smart Energy (RISE), The Hong Kong Polytechnic University, Hong Kong, China.
³ State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China.
⁴ Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
⁵ Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, China.
⁶ Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China.
⁷ Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China. ming-jie.li@polyu.edu.hk.
⁸ State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China. guowb@jlu.edu.cn.
⁹ Department of Electrical and Electronic Engineering, Photonic Research Institute (PRI), Research Institute of Smart Energy (RISE), The Hong Kong Polytechnic University, Hong Kong, China. gang.w.li@polyu.edu.hk.
¹⁰ Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, China. ifewdxu@nwpu.edu.cn.
¹¹ Henan Institute of Flexible Electronics (HIFE) and School of Flexible Electronics (SoFE), Henan University, 379 Mingli Road, 450046, Zhengzhou, China. ifewdxu@nwpu.edu.cn.
¹² Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, Sweden. feng.gao@liu.se.

^# Contributed equally.

PMID: 39843419
DOI: 10.1038/s41467-025-56001-x

Abstract

One of the key advantages of perovskite light-emitting diodes (PeLEDs) is their potential to achieve high performance at much higher current densities compared to conventional solution-processed emitters. However, state-of-the-art PeLEDs have not yet reached this potential, often suffering from severe current-efficiency roll-off under intensive electrical excitations. Here, we demonstrate bright PeLEDs, with a peak radiance of 2409 W sr^-1 m^-2 and negligible current-efficiency roll-off, maintaining high external quantum efficiency over 20% even at current densities as high as 2270 mA cm^-2. This significant improvement is achieved through the incorporation of electron-withdrawing trifluoroacetate anions into three-dimensional perovskite emitters, resulting in retarded Auger recombination due to a decoupled electron-hole wavefunction. Trifluoroacetate anions can additionally alter the crystallization dynamics and inhibit halide migration, facilitating charge injection balance and improving the tolerance of perovskites under high voltages. Our findings shed light on a promising future for perovskite emitters in high-power light-emitting applications, including laser diodes.