Oxygen-dependent Photoluminescence and Electrical Conductance of Zinc Tin Oxide (ZTO): A Modified Stern-Volmer Description

Linda Kothe; Josefin Klippstein; Marvin Kloß; Marc Wengenroth; Michael Poeplau; Stephan Ester; Michael Tiemann

doi:10.1002/cphc.202400984

Oxygen-dependent Photoluminescence and Electrical Conductance of Zinc Tin Oxide (ZTO): A Modified Stern-Volmer Description

Chemphyschem. 2025 Jan 14:e202400984. doi: 10.1002/cphc.202400984. Online ahead of print.

Authors

Linda Kothe¹, Josefin Klippstein¹, Marvin Kloß¹, Marc Wengenroth², Michael Poeplau¹, Stephan Ester¹, Michael Tiemann³

Affiliations

¹ Paderborn University: Universitat Paderborn, Chemistry, GERMANY.
² Paderborn University: Universitat Paderborn, Electrical Engineering, GERMANY.
³ Paderborn University, Department of Chemistry, Warburger Str. 100, D-33098, Paderborn, GERMANY.

PMID: 39807022
DOI: 10.1002/cphc.202400984

Abstract

Zinc tin oxide (ZTO) is investigated as a photoluminescent sensor for oxygen (O2); chemisorbed oxygen quenches the luminescence intensity. At the same time, ZTO is also studied as a resistive sensor; being an n-type semiconductor, its electrical conductance decreases by adsorption of oxygen. Both phenomena can be exploited for quantitative O2 sensing. The respective sensor responses can be described by the same modified Stern-Volmer model that distinguishes between accessible and non-accessible luminescence centers or charge carriers, respectively. The impact of the temperature is studied in the range from room temperature up to 150 °C.

Keywords: zinc tin oxide (ZTO), gas sensor, photoluminescence, resistive sensor, Stern-Volmer model.