Low-Frequency Noise Related to the Scattering Effect in p-Type Copper(I) Oxide Thin-Film Transistors

Jaewook Yoo; Seohyeon Park; Hongseung Lee; Seongbin Lim; Hyeonjun Song; Minah Park; Soyeon Kim; Jo Hak Jeong; JungWoo Bong; Keun Heo; Kiyoung Lee; TaeWan Kim; Peide D Ye; Hagyoul Bae

doi:10.1021/acsami.4c14876

Low-Frequency Noise Related to the Scattering Effect in p-Type Copper(I) Oxide Thin-Film Transistors

ACS Appl Mater Interfaces. 2024 Dec 31. doi: 10.1021/acsami.4c14876. Online ahead of print.

Authors

Affiliations

¹ Department of Electronic Engineering, Jeonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju 54896, Republic of Korea.
² School of Semiconductor Science and Technology, Jeonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju 54896, Republic of Korea.
³ Department of Materials Science & Engineering, Hongik University, Seoul 04066, Republic of Korea.
⁴ School of Advanced Cross-Disciplinary Studies, Department of AI Semiconductor, University of Seoul, 163 Seoulsiripdae-ro, Dongdaemun-gu, Seoul 02504, Republic of Korea.
⁵ School of Electrical and Computer Engineering, Purdue University, 465 Northwestern Avenue, West Lafayette, Indiana 47907, United States.

PMID: 39740115
DOI: 10.1021/acsami.4c14876

Abstract

In this study, we investigate the origins of low-frequency noise (LFN) and 1/f noise in Cu₂O thin-film transistors (TFTs). The static direct current (DC) I-V characterization demonstrates that the channel resistance (R_ch) contributes significantly to mobility degradation in the TFTs, with channel thickness (t_ch) controlled through the plasma-enhanced atomic layer deposition (PEALD) process. The 1/f noise followed the Hooge mobility fluctuation (HMF) model, and it was observed that both Coulomb and phonon scattering within the channel, which increased with a decrease in t_ch, contributed simultaneously. Increased R_ch contributed more significantly to the 1/f noise than to the contact resistance (R_C), as evidenced by the R_C configuration of the measurements, which also revealed that R_C depends upon t_ch. This study demonstrates that t_ch is a major noise source in Cu₂O TFTs and presents guidelines for the development of Cu₂O TFTs and potential high-mobility p-type oxide semiconductors.

Keywords: Arrhenius plot; Hooge mobility fluctuation; channel resistance; copper(I) oxide semiconductor; low-frequency noise; scattering; transmission line method (TLM).