A Reconfigurable Polarimetric Photodetector Based on the MoS2/PdSe2 Heterostructure with a Charge-Trap Gate Stack

Xin Huang; Qinghu Bai; Yang Guo; Qijie Liang; Tengzhang Liu; Wugang Liao; Aizi Jin; Baogang Quan; Haifang Yang; Baoli Liu; Changzhi Gu

doi:10.3390/nano14231936

A Reconfigurable Polarimetric Photodetector Based on the MoS₂/PdSe₂ Heterostructure with a Charge-Trap Gate Stack

Nanomaterials (Basel). 2024 Dec 1;14(23):1936. doi: 10.3390/nano14231936.

Authors

Xin Huang^{1

2}, Qinghu Bai^{1

2}, Yang Guo^{1

2}, Qijie Liang³, Tengzhang Liu^{4

5}, Wugang Liao^{4

5}, Aizi Jin¹, Baogang Quan¹, Haifang Yang¹, Baoli Liu^{1

3

6}, Changzhi Gu^{1

2}

Affiliations

¹ Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
² School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, China.
³ Songshan Lake Materials Laboratory, Dongguan 523808, China.
⁴ State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, China.
⁵ College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China.
⁶ CAS Center for Excellence in Topological Quantum Computation, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, China.

Abstract

Besides the intensity and wavelength, the ability to analyze the optical polarization of detected light can provide a new degree of freedom for numerous applications, such as object recognition, biomedical applications, environmental monitoring, and remote sensing imaging. However, conventional filter-integrated polarimetric sensing systems require complex optical components and a complicated fabrication process, severely limiting their on-chip miniaturization and functionalities. Herein, the reconfigurable polarimetric photodetection with photovoltaic mode is developed based on a few-layer MoS₂/PdSe₂ heterostructure channel and a charge-trap structure composed of Al₂O₃/HfO₂/Al₂O₃ (AHA)-stacked dielectrics. Because of the remarkable charge-trapping ability of carriers in the AHA stack, the MoS₂/PdSe₂ channel exhibits a high program/erase current ratio of 10⁵ and a memory window exceeding 20 V. Moreover, the photovoltaic mode of the MoS₂/PdSe₂ Schottky diode can be operated and manipulable, resulting in high and distinct responsivities in the visible broadband. Interestingly, the linear polarization of the device can be modulated under program/erase states, enabling the reconfigurable capability of linearly polarized photodetection. This study demonstrates a new prototype heterostructure-based photodetector with the capability of both tunable responsivity and linear polarization, demonstrating great potential application toward reconfigurable photosensing and polarization-resolved imaging applications.

Keywords: charge-trap gate stack; polarimetric photodetector; reconfiguration; two-dimensional heterostructure.

Grants and funding

This work was supported by the National Natural Science Foundation of China under Grant Nos. 62204259, 92265110, 62174179, 11974386, and 61905274, the National Key Research and Development Program of China under Grant Nos. 2024YFA1207700, 2022YFA1204100, and 2021YFA1400700, Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No. XDB33020200, and the Guangdong Basic and Applied Basic Research Foundation under Grant No. 2023A1515010693. This work was also supported by the Micro/nano Fabrication Laboratory of Synergetic Extreme Condition User Facility (SECUF).