Protocol for depositing transparent conductive Ta-doped SnO2 film by hollow cathode gas flow sputtering technology

Abstract

Transparent conductive Ta-doped SnO₂ (SnO₂: Ta) thin film with low surface roughness, low resistivity, and high carrier concentration is one potential alternative of commercial transparent conductive oxides (TCOs). Here, we present a protocol for fabricating tin oxide films by hollow cathode gas flow sputtering technology. We describe steps for preparing and cleaning substrate, and film deposition process on the fresh uncorroded float glass substrate. We then detail procedures for measuring the optical and electrical properties of the film. For complete details on the use and execution of this protocol, please refer to Huo et al.¹.

Keywords: chemistry; material sciences; physics.